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DATA SHEET

Silicon Transistor

2SA1978

PNP EPITAXIAL SILICON TRANSISTOR

MICROWAVE AMPLIFIER

1996

Document No. P11028EJ1V0DS00 (1st edition)

Date Published April 1996 P

Printed in Japan

PRELIMINARY DATA SHEET

FEATURES

PACKAGE DIMENSIONS

•

High fT

(in milimeters)

fT = 5.5 GHz TYP.

•

| S21e |

2 = 10.0 dB TYP. @f = 1.0 GHz, V

CE =

−10 V, IC = −15 mA

•

High speed switching characteristics

•

Equivalent NPN transistor is the 2SC2351.

•

Alternative of the 2SA1424.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °

°°°C)

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

VCB0

−20

Collector to Emitter Voltage

VCE0

−12

Emitter to Base Voltage

VEB0

−3.0

Collector Current

−50

Total Power Dissipation

200

Junction Temperature

150

°C

Storage Temperature

Tstg

−65 to +150

°C

ELECTRICAL CHARACTERISTICS (TA = 25 °

°°°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Collector Cutoff Current

ICB0

VCB =

−10 V

−0.1

µA

Emitter Cutoff Current

IEB0

VEB =

−2 V

−0.1

µA

DC Current Gain

hFE

VCE =

−10 V, IC = −15 mA

100

Gain Bandwidth Product

VCE =

−10 V, IC = −15 mA

4.0

5.5

GHz

Collector Capacitance

Cre*

VCB =

−10 V, IE = 0, f = 1 MHz

0.5

Insertion Power Gain

| S21e |

VCE =

−10 V, IC = −15 mA, f = 1.0 GHz

8.0

10.0

Noise Figure

VCE =

−10 V, IC = −3.0 mA, f = 1 GHz

2.0

Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.

hFE Classification

Rank

Marking

T93

hFE

20 to 100

2.8+0.2

1.5

0.65

+0.1

–0.15

Marking

PIN CONNECTIONS

1: Emitter

2: Base

3: Collector

Marking: T93

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