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TPCP8701 датащи(PDF) 3 Page - Toshiba Semiconductor

номер детали TPCP8701
подробное описание детали  TOSHIBA Transistor Silicon NPN Epitaxial Type
PDF  5 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCP8701 датащи(HTML) 3 Page - Toshiba Semiconductor

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TPCP8701
2004-05-11
3
VBE (sat) – IC
0.001
10
10
100
10000
1000
0.01
0.1
Ta
= 100°C
−55°C
25°C
0.001
0.1
10
10
1
0.01
0.1
Ta
= −55°C
100°C
25°C
0.001
0.001
10
1
0.1
0.01
0.1
Ta
= 100°C
−55°C
25°C
0
0
1.6
3
−55°C
Ta
= 100°C
25°C
Collector
−emitter voltage VCE
(V)
IC – VCE
Collector current IC (A)
hFE – IC
Collector current IC (A)
VCE (sat) – IC
Collector current IC (A)
Base
−emitter saturation voltage VBE (V)
IC – VBE
0
0
0.4
0.8
1.0
1
3
4
Common emitter
Ta
= 25°C
Single nonrepetitive pulse
2
IB = 1 mA
20
10
5
2
0.6
0.2
2
1
1.2
0.4
0.8
Common emitter
VCE = 2 V
Single nonrepetitive pulse
Common emitter
β
= 50
Single nonrepetitive pulse
Common emitter
β
= 50
Single nonrepetitive pulse
Common emitter
VCE = 2 V
Single nonrepetitive pulse
30
40
50
60
70
1
1
0.01
1
Ambient temperature Ta (°C)
Pc – Ta
0.2
1.0
0
160
0.6
20
80
100
0
40
120
60
140
0.4
0.8
DC Operation
Ta = 25°C
Mounted on an FR4 board glass epoxy,
1.6 mm thick, Cu area: 645 mm
2)
(1) Single-device operation
(2) Single-device value at dual operation
(2)
(1)
(2)



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