TPCP8404 datasheet(3/11 Pages) TOSHIBA

номер детали	TPCP8404

подробное описание детали	TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MO/U-MOS)

PDF	11 Pages

Scroll/Zoom	100%

производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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3 / 11 page

TPCP8404

2010-02-01

P-ch

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±20 V, VDS = 0 V

⎯

±100

Drain cut-off current

IDSS

VDS = −30 V, VGS = 0 V

⎯

−10

μA

V (BR) DSS

ID = −10 mA, VGS = 0 V

−30

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = −10 mA, VGS = 20 V

−10

⎯

Gate threshold voltage

Vth

VDS = −10 V, ID = −1 mA

−0.8

⎯

−2.0

VGS = −4.5 V, ID = −2.0 A

⎯

Drain-source ON resistance

RDS (ON)

VGS = −10 V, ID = −2.0 A

⎯

Forward transfer admittance

|Yfs|

VDS = −10 V, ID = −2.0 A

3.7

7.3

⎯

Input capacitance

Ciss

⎯

510

⎯

Reverse transfer capacitance

Crss

⎯

110

⎯

Output capacitance

Coss

VDS = −10 V, VGS = 0 V, f = 1 MHz

⎯

170

⎯

Rise time

⎯

Turn-on time

ton

⎯

Fall time

⎯

Switching time

Turn-off time

toff

Duty

≤ 1%, tw = 10 μs

⎯

Total gate charge

(gate-source plus gate-drain)

⎯

Gate-source charge 1

Qgs1

⎯

1.7

⎯

Gate-drain (“miller”) charge

Qgd

VDD ≈ −24 V, VGS = −10 V,

ID = −4 A

⎯

4.6

⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse (Note 1)

IDRP

⎯

−16

Forward voltage (diode)

VDSF

IDR = −4 A, VGS = 0 V

⎯

1.2

VDD ≈ −15 V

−10 V

0 V

ID = −2 A

VOUT

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