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TLP285-4 датащи(PDF) 3 Page - Toshiba Semiconductor

номер детали TLP285-4
подробное описание детали  TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR
PDF  16 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP285-4 датащи(HTML) 3 Page - Toshiba Semiconductor

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TLP285-4
2009-05-27
3
Absolute Maximum Ratings (Ta = 25℃)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Forward Current
IF(RMS)
50
mA
Forward Current Derating
∆IF /°C
−0.67 (Ta≥50°C)
mA /°C
Pulse Forward Current
(Note2)
IFP
1
A
Reverse Voltage
VR
5
V
Junction Temperature
Tj
125
°C
Collector-Emitter Voltage
VCEO
80
V
Emitter-Collector Voltage
VECO
7
V
Collector Current
IC
50
mA
Collector Power Dissipation
(1 Circuit)
PC
100
mW
Collector Power Dissipation
Derating(Ta≥25°C)
(1 Circuit)
∆PC /°C
−1.0
mW /°C
Junction Temperature
Tj
125
°C
Operating Temperature Range
Topr
−55 to 110
°C
Storage Temperature Range
Tstg
−55 to 125
°C
Lead Soldering Temperature
Tsol
260 (10s)
°C
Total Package Power Dissipation
(1 Circuit)
PT
170
mW
Total Package Power Dissipation
Derating (Ta≥25°C)
(1 Circuit)
∆PT /°C
−1.7
mW /°C
Isolation Voltage
(Note3)
BVS
3750
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note2: Pulse width
≤ 100μs, frequency 100Hz
Note3: AC, 1 minute, R.H.≤60%, Device considered a two terminal device : LED side pins shorted together and
DETECTOR side pins shorted together.
Individual Electrical Characteristics (Ta = 25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Forward Voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse Current
IR
VR = 5 V
—
—
10
μA
Capacitance
CT
V = 0, f = 1 MHz
—
30
—
pF
Collector-Emitter Breakdown Voltage
V(BR) CEO
IC = 0.5 mA
80
—
—
V
Emitter-Collector Breakdown Voltage
V(BR) ECO
IE = 0.1 mA
7
—
—
V
VCE = 48 V,
Ambient Light Below
(100 ℓx)
(Note4)
—
0.01
(2)
0.1
(10)
μA
Collector Dark Current
(Note5)
ICEO
VCE = 48 V, Ta = 85°C
Ambient Light Below
(100 ℓx)
(Note4)
—
2
(4)
50
(50)
μA
Capacitance
(Collector to Emitter)
CCE
V = 0, f = 1 MHz
—
10
—
pF
Note.4 : Irradiation to marking side using standard light bulb.
Note 5: Because of the construction,leak current might be increased by ambient light.
Please use photocoupler with less ambient light.



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