TLP284

2009-05-27

2

Current Transfer Ratio

Note1: Ex. rank GB: TLP284 (GB)

Application type name for certification test, please use standard product type name, i.e.

TLP284 (GB): TLP284

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Forward current

±50

mA

Forward current derating

-1.0 (Ta ≥ 75°C)

mA /°C

Pulse forward current (Note2)

±1

A

Junction temperature

125

°C

Collector

−emitter voltage

80

V

Emitter

−collector voltage

7

V

Collector current

50

mA

Collector power dissipation

(1 circuit)

150

mW

Collector power dissipation

derating (Ta ≥ 25°C)

−1.5

mW /°C

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Operating temperature range

−55~110

°C

Lead soldering temperature

260 (10s)

°C

Total package power dissipation

200

mW

Total package power dissipation

derating (Ta ≥ 25°C)

−2.0

mW /°C

Isolation voltage

(Note3)

3750

Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note2:

Pulse width

≤ 100μs, frequency 100Hz

Note3:

AC, 1min., R.H.≤ 60%, Device considered a two terminal device: LED side pins shorted together and

detector side pins shorted together.

Current Transfer Ration (%)

TYPE

Classi-

Fication(Note1)

Min

Max

Marking of Classification

Blank

50

600

Blank ,YE,GR,BL,GB

Rank Y

50

150

YE

Rank GR

100

300

GR

Rank BL

200

600

BL

TLP284

Rank GB

100

600

GB