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UPC3250T7L датащи(PDF) 9 Page - Renesas Technology Corp

номер детали UPC3250T7L
подробное описание детали  SiGe CMOS/BiCMOS Integrated Circuit
PDF  18 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

UPC3250T7L датащи(HTML) 9 Page - Renesas Technology Corp

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μPC3250T7L
R09DS0052EJ0100 Rev.1.00
Page 9 of 18
Oct 23, 2012
TYPICAL CHARACTERISTICS
(TA = +25°C, unless otherwise specified)
Rcal vs. ID FET, VD FET
Rcal (k
Ω)
Adjustment Resistor of Drain Current of Low Noise FET
25
50
75
125
100
0
20
18
16
14
12
10
8
6
4
2
2.5
2.4
2.3
2.2
2.1
2.0
1.9
1.8
1.7
1.6
1.5
ID FET
VD FET
TA= +85
°C
IF frequency vs. Conversion Gain
500
1 000
1 500
2 000
2 500
3 000
0
45
40
35
30
25
20
IF frequency fIF (MHz)
Low Gain mode
High Gain mode
ABS-S_LowGain
HighBand_LowGain
LowBand_LowGain
ABS-S_HighGain
HighBand_HighGain
LowBand_HighGain
TA = +25
°C
IF frequency vs. Conversion Gain
500
1 000
1 500
2 000
2 500
3 000
0
45
40
35
30
25
20
IF frequency fIF (MHz)
High Gain mode
Low Gain mode
ABS-S_LowGain
HighBand_LowGain
LowBand_LowGain
ABS-S_HighGain
HighBand_HighGain
LowBand_HighGain
TA =
−40°C
IF frequency vs. Conversion Gain
500
1 000
1 500
2 000
2 500
3 000
0
45
40
35
30
25
20
IF frequency fIF (MHz)
Low Gain mode
High Gain mode
ABS-S_LowGain
HighBand_LowGain
LowBand_LowGain
ABS-S_HighGain
HighBand_HighGain
LowBand_HighGain
Remark The graphs indicate nominal characteristics.



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