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AD5560JSVUZ датащи(PDF) 7 Page - Analog Devices

номер детали AD5560JSVUZ
подробное описание детали  1.2 A Programmable Device Power Supply
PDF  68 Pages
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производитель  AD [Analog Devices]
домашняя страница  http://www.analog.com
Logo AD - Analog Devices

AD5560JSVUZ датащи(HTML) 7 Page - Analog Devices

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Data Sheet
AD5560
Rev. D | Page 7 of 68
Parameter
Min
Typ
Max
Unit
Test Conditions/Comments
MEASOUT Gain = 0.2
Linearity Error
−5.5
+5.5
mV
Referred to MV input, nominal supply (±16.5 V,
0x8000 offset DAC).
−9
+24
mV
Referred to MV input, low supply (−25 V/+8 V,
0xD4EB offset DAC).
−4
+13
mV
Referred to MV input, high supply (−5 V/+28 V,
0xD1D offset DAC).
Offset Error
−30
+20
mV
Referred to MV output.
Offset Error Tempco1
10
µV/°C
Standard deviation = 12 µV/°C, referred to MV
output.
NSD1
50
nV/√Hz
@ 1 kHz, at MEASOUT, inputs grounded.
COMBINED LEAKAGE
Includes SYS_SENSE, SYS_FORCE, EXTFORCE1,
EXTFORCE2, EXTMEASIH1, EXTMEASIH2,
EXTMEASIL, FORCE, and SENSE; measured with
PD = 1, SW-INH = 0 (power up and tristate).
Leakage Current
−37.5
+37.5
nA
−30
+30
nA
TJ = 25°C to 70°C.
Leakage Current Tempco1
±0.1
±0.4
nA/°C
SENSE INPUT
Leakage Current
−2.5
+2.5
nA
Measured with PD = 1, SW-INH = 0 (power-up
and tristate).
Leakage Current Tempco1
±0.0
1
nA/°C
Pin Capacitance1
10
pF
EXTMEASIH1, EXTMEASIH2, EXTMEASIL
Leakage Current
−2.5
+2.5
nA
Measured with PD = 1, SW-INH = 0 (power-up
and tristate).
Leakage Current Tempco1
±0.0
1
nA/°C
Pin Capacitance1
5
pF
FORCE OUTPUT, FORCE
Maximum Current Drive1
−30
+30
mA
Leakage Current
−10
+10
nA
Measured with PD = 1, SW-INH = 0 (power-up
and tristate).
Leakage Current Tempco1
±0.0
3
nA/°C
Pin Capacitance1
120
pF
EXTFORCE1 OUTPUTS
Maximum Current Drive1
−1200
+1200
mA
Set with external sense resistor, limited by
headroom and power dissipation.
Leakage Current
−7.5
+7.5
nA
Measured with PD = 1, SW-INH = 0 (power-up
and tristate).
Leakage Current Tempco1
±0.0
3
±0.06
nA/°C
Pin Capacitance1
275
pF
EXTFORCE2 OUTPUTS
Maximum Current Drive1
−500
+500
mA
Set with external sense resistor, limited by
headroom and power dissipation.
Leakage Current
−5
+5
nA
Measured with PD = 1, SW-INH = 0 (power-up
and tristate).
Leakage Current Tempco1
±0.0
2
±0.05
nA/°C
Pin Capacitance1
100
pF
SYS_SENSE
Voltage Range
AVSS
AVDD
V
Leakage Current
−2.5
+2.5
nA
SYS_SENSE high-Z, force amplifier inhibited.
Leakage Current Tempco1
±0.0
05
±0.025
nA/°C
Path On Resistance
280
Ω
AVDD = 16.5 V, AVSS = −16.5 V.
Pin Capacitance1
5
pF



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