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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AD8221BRZ-R7 датащи(PDF) 22 Page - Analog Devices |
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AD8221BRZ-R7 датащи(HTML) 22 Page - Analog Devices |
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22 / 24 page  AD8221 Rev. C | Page 22 of 24 DIE INFORMATION Die size: 1575 μm × 2230 μm Die thickness: 381 μm To minimize gain errors introduced by the bond wires, use Kelvin connections between the chip and the gain resistor, RG, by connecting Pad 2A and Pad 2B in parallel to one end of RG and Pad 3A and Pad 3B in parallel to the other end of RG. For unity gain applications where RG is not required, Pad 2A and Pad 2B must be bonded together as well as the Pad 3A and Pad 3B. 1 2A 2B 3A 3B 4 5 6 8 7 LOGO Figure 53. Bond Pad Diagram Table 7. Bond Pad Information Pad No. Mnemonic Pad Coordinates1 X (μm) Y (μm) 1 −IN –379 +951 2A RG –446 +826 2B RG –615 +474 3A RG –619 +211 3B RG –490 –190 4 +IN –621 –622 5 −VS +635 –823 6 REF +649 –339 7 VOUT +612 +84 8 +VS +636 +570 1 The pad coordinates indicate the center of each pad, referenced to the center of the die. The die orientation is indicated by the logo, as shown in Figure 53. |
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