2

Electrical Specifications

Symbol

Parameters/Condition

Unit

Absolute Max

Vd

V

8

Id

mA

56

dBm

15

Total Power Dissipation

mW

460

Tch

Max Channel Temperature

°C

+150

θjc

°C/W

95.3

Notes

1. Operation of this device above any one of these parameters may cause permanent damage

2. Bias is assumed DC quiescent conditions

3. With the DC (typical bias) and RF applied to the device at board temperature Tb = 25° C

4. Thermal resistance is measured from junction to board using IR method

Symbol

Parameters/Condition

Unit

Minimum

Typical

Maximum

Supply Current

mA

27

36

44

Noise Figure

dB

1.5

1.9

Associated Gain

dB

15.5

16.8

19.5

Input Return Loss

dB

-11

Output Return Loss

dB

-11

dBm

25

Notes

1. Losses of the test system have been de-embedded from final data

2. Measured data obtained from wafer-probing using a G-S, S-G pyramid probe

3. NF and Ga obtained from Noise Figure Meter

4. S-parameters and OIP3 data obtained using 300

μm G-S-G probing on PCB substrate

5. OIP3 test condition: Center frequency = 5 GHz, 2 tone offset = 10 MHz, Pin = -25 dBm