2

80

120

110

100

90

LSL

USL

LSL

USL

13.5

14

14.5

15

15.5

16

16.5

LSL

37

38

39

40

41

42

43

44

45

LSL

21.2

21.6

22

22.4

22.8

23.2

2.8

4

3.8

3.6

3.4

3.2

3

USL

Symbol

Parameter

Units

Absolute Max.

Device Voltage, RF output to ground

V

5.5

CW RF Input Power

dBm

20

W

0.75

Junction Temperature

°C

150

Storage Temperature

°C

-65 to 150

(Vdd = 5V, Ids = 100mA, Tc = 85°C)

Notes:

2. Operation of this device in excess

of any of these limits may cause

permanent damage.

3. Thermal resistance measured using

Infrared measurement technique.

4. This is limited by maximum Vdd and

Ids. Derate 18.7 mW/°C for Tc>110°C.

Figure 1. Ids, LSL=80mA , nominal=104mA, USL=125mA

Figure 2. Gain, LSL=13.7dB, nominal=14.6dB, USL=16.7dB

Figure 3. OIP3, LSL=37.5dBm, nominal=41.5dBm

Figure 4. P1dB, LSL=21.2dBm, nominal=22.5dBm

Figure 5. NF, nominal=3.23dB, USL=4dB

Notes:

5. Distribution data sample size is 500 samples taken from 3 different

wafer lots and 6 different wafers. Future wafers allocated to this

product may have nominal values anywhere between the upper and

lower limits.

6. Measurements were made on a characterization test board, which

represents a trade-off between optimal OIP3, gain and P1dB. Circuit

trace losses have not been de-embedded from measurements

above.