2

Thermal Resistance

Notes:

1. Operation of this device in excess of any of

these limits may cause permanent damage

2. Source lead temperature is 25°C. Derate

19.8mW/°C for TL > 54.56°C

3. Thermal resistance measured using 150°C Infra-

Red Microscopy Technique.

Symbol

Parameter and Test Condition

Frequency

Units

Min.

Typ.

Max.

Quiescent Current

N/A

mA

80

97

120

NF

Noise Figure

0.45GHz

0.9GHz

1.9GHz

2.5GHz

dB

–

2.8

3

3

3.5

3.6

Gain

Gain

0.45GHz

0.9GHz

1.9GHz

2.5GHz

dB

11.8

19.3

16.5

13.3

12

14.8

Output Third Order Intercept Point

dBm

36.5

40.5

40.5

39

39

–

P1dB

Output Power at 1dB Gain Compression

0.45GHz

0.9GHz

1.9GHz

2.5GHz

dBm

22.5

23.5

23.5

23.3

23

–

PAE

Power Added Efficiency at P1dB

0.45GHz

0.9GHz

1.9GHz

2.5GHz

%

44

43

40

37

–

IRL

Input Return Loss

0.45GHz

0.9GHz

1.9GHz

2.5GHz

dB

10.5

11

15

18

ORL

Output Return Loss

0.45GHz

0.9GHz

1.9GHz

2.5GHz

dB

9.5

12

14.5

12

ISOL

Isolation

0.45GHz

0.9GHz

1.9GHz

2.5GHz

dB

29

28

25.5

24

Notes:

4. Measurements obtained from a test circuit described in Figure 43.

5. OIP3 test condition: F1 - F2 = 10MHz, with input power of -10dBm per tone measured at worst case side band.

Symbol

Parameter

Units

Absolute

Maximum

Drain Current

mA

180

Devices voltage, RF output to ground

V

8.4

mW

1512

CW RF Input Power

dBm

24

Junction Temperature

°C

150

Storage Temperature

°C

-65 to 150