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PMPB33XP датащи(PDF) 2 Page - NXP Semiconductors

номер детали PMPB33XP
подробное описание детали  20 V, single P-channel Trench MOSFET
PDF  14 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

PMPB33XP датащи(HTML) 2 Page - NXP Semiconductors

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NXP Semiconductors
PMPB33XP
20 V, single P-channel Trench MOSFET
PMPB33XP
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
5 September 2012
2 / 14
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
Simplified outline
Graphic symbol
1
D
drain
2
D
drain
3
G
gate
4
S
source
5
D
drain
6
D
drain
7
D
drain
8
S
source
6
5
7
8
4
Transparent top view
1
2
3
DFN2020MD-6 (SOT1220)
S
D
G
017aaa257
3. Ordering information
Table 3.
Ordering information
Package
Type number
Name
Description
Version
PMPB33XP
DFN2020MD-6 plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals
SOT1220
4. Marking
Table 4.
Marking codes
Type number
Marking code
PMPB33XP
1S
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
-
-20
V
VGS
gate-source voltage
Tj = 25 °C
-12
12
V
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
-
-7.9
A
VGS = -4.5 V; Tamb = 25 °C
[1]
-
-5.5
A
ID
drain current
VGS = -4.5 V; Tamb = 100 °C
[1]
-
-3.5
A
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
-
-22
A
Ptot
total power dissipation
Tamb = 25 °C
[1]
-
1.7
W



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