PMPB11EN

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Product data sheet

Rev. 1 — 16 May 2012

8 of 15

NXP Semiconductors

PMPB11EN

30 V N-channel Trench MOSFET

Fig 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 11. Normalized drain-source on-state resistance as

a function of junction temperature; typical

values

Fig 12. Gate-source threshold voltage as a function of

junction temperature

Fig 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

017aaa558

03

2

1

10

15

5

20

25

(A)

0

-60

180

120

060

017aaa559

1.0

1.4

1.8

a

0.6

-60

180

120

060

017aaa560

1.0

1.5

0.5

2.0

2.5

(V)

0.0

min

typ

max

10

1

017aaa561

C

(pF)

10