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UPD166019T1F датащи(PDF) 9 Page - Renesas Technology Corp

номер детали UPD166019T1F
подробное описание детали  Single P-Channel High-Side Intelligent Power Device
PDF  18 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

UPD166019T1F датащи(HTML) 9 Page - Renesas Technology Corp

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PD166019T1F
Preliminary
R07DS0730EJ0100 Rev.1.00
Page 9 of 16
Apr 25, 2012
Device Behavior at Low Voltage Condition
If the supply voltage, VCC goes down under VCIN(UV), The device shuts down the output. If the supply voltage, VCC
increase over VCIN(ST), the device turns on the output automatically. The device keeps off-state if supply voltage, VCC
does not increase over VCIN(ST) after under voltage shutdown.
VIN
0
0
VOUT/VCC
VBAT
VOUT
VCC
VCIN(UV)
VCIN(ST)
IL
t
Loss of Ground Protection
In case of complete loss of the device ground connection, but connected load ground, the device securely changes to
off-state by low voltage detector. In loss of ground condition voltage of internal circuit is as below. Thus RIN should be
bigger than 40 k
 to activate this function.
Internal circuit voltage = VCC – Ion  (RIN + 100 ) – Vf
Low voltage detection voltage: VCIN(UV)
Even though there is possibility to keep on state if RIN is lower than 40 k, output MOSFET is secured in full on state
by circuit design.
VCC
VCC
IN
GND
Internal
Circuit
Ion
Ion: Circuit current, 300 μA min
100
Ω
RIN
Low Voltage
Detector



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