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Handwound датащи(PDF) 3 Page - Freescale Semiconductor, Inc

номер детали Handwound
подробное описание детали  RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
PDF  23 Pages
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производитель  FREESCALE [Freescale Semiconductor, Inc]
домашняя страница  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

Handwound датащи(HTML) 3 Page - Freescale Semiconductor, Inc

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MRFE6VP61K25HR6 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
3
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA =25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 100 mA, Pout = 1250 W Peak (250 W Avg.),
f = 230 MHz, 100 sec Pulse Width, 20% Duty Cycle
Power Gain
Gps
23.0
24.0
26.0
dB
Drain Efficiency
D
72.5
74.0
—
%
Input Return Loss
IRL
—
--14
--10
dB
Table 5. Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ = 100 mA
Frequency
(MHz)
Signal Type
VSWR
Pout
(W)
Test Voltage, VDD
Result
230
Pulse
(100 sec, 20% Duty Cycle)
>65:1 at all
Phase Angles
1500 Peak
(3 dB Overdrive)
50
No Device Degradation
1. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GS) parts.



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