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STTH20L03C датащи(PDF) 4 Page - STMicroelectronics

номер детали STTH20L03C
подробное описание детали  High frequency secondary rectifier
PDF  9 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STTH20L03C датащи(HTML) 4 Page - STMicroelectronics

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Characteristics
STTH20L03C
4/9
Doc ID 023115 Rev 1
Figure 5.
Reverse recovery time versus dIF/dt
(typical values, per diode)
Figure 6.
Reverse recovery charge versus
dIF/dt (typical values, per diode)
0
10
20
30
40
50
60
70
80
90
100
0
50
100
150
200
250
300
350
400
450
500
IF=IF(AV)
VR=200 V
Tj=125 °C
dIF/dt(A/µs)
trr(ns)
0
50
100
150
200
250
300
350
400
0
50
100
150
200
250
300
350
400
450
500
Q
RR(nC)
IF=IF(AV)
VR=200 V
Tj=125 °C
dIF/dt(A/µs)
Figure 7.
Reverse recovery softness factor
versus dIF/dt (typical values, per
diode)
Figure 8.
Relative variation of dynamic
parameters versus junction
temperature
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
50
100
150
200
250
300
350
400
450
500
S
FACTOR
IF=IF(AV)
VR=200 V
Tj=125 °C
dIF/dt(A/µs)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
25
50
75
100
125
IF=IF(AV)
VR=200 V
Reference: Tj=125 °C
IRM
SFACTOR
QRR
Tj(°C)
Figure 9.
Transient peak forward voltage
versus dIF/dt (typical values, per
diode)
Figure 10.
Forward recovery time versus dIF/dt
(typical values, per diode)
VFP(V)
0
2
4
6
8
10
12
14
0
50
100
150
200
250
300
350
400
450
500
IF=IF(AV)
Tj=125 °C
dIF/dt(A/µs)
0
20
40
60
80
100
120
140
160
180
0
50
100
150
200
250
300
350
400
450
500
IF=IF(AV)
VFR=1.05 V
Tj=125 °C
dIF/dt(A/µs)
t
(ns)
FR



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