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STF130N10F3 датащи(PDF) 5 Page - STMicroelectronics

номер детали STF130N10F3
подробное описание детали  N-channel 100 V, 7.8 m廓 typ., 120 A STripFET?줚II Power MOSFET in TO-220FP, I짼PAKFP, H짼PAK-2 and TO-220 packages
PDF  23 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF130N10F3 датащи(HTML) 5 Page - STMicroelectronics

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STF130N10F3, STFI130N10F3, STH130N10F3-2, STP130N10F3
Electrical characteristics
Doc ID 018492 Rev 3
5/23
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current
(pulsed)
For TO-220FP and
I²PAKFP
-
46
184
A
A
ISD
ISDM
(2)
2.
Pulse width limited by safe operating area
Source-drain current
Source-drain current
(pulsed)
For TO-220, H²PAK-2
-
120
450
A
A
VSD
(3)
3.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD=120 A, VGS=0; for
TO-220, H²PAK-2
-1.5
V
ISD=46 A, VGS=0; for
TO-220FP and
I²PAKFP
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=120 A,
di/dt = 100 A/µs,
VDD=80 V, Tj=150 °C
(see Figure 21)
-
68
182
5.4
ns
nC
A



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