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L6206Q датащи(PDF) 15 Page - STMicroelectronics

номер детали L6206Q
подробное описание детали  DMOS dual full bridge driver
PDF  27 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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L6206Q датащи(HTML) 15 Page - STMicroelectronics

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L6206Q
Application information
27
5
Application information
A typical application using the L6206Q device is shown in Figure 14. Typical component
values for the application are shown in Table 7. A high quality ceramic capacitor in the range
of 100 to 200 nF should be placed between the power pins (VSA and VSB) and ground near
the L6206Q to improve the high frequency filtering on the power supply and reduce high
frequency transients generated by the switching. The capacitors connected from the
ENA/OCDA and ENB/OCDB nodes to ground set the shutdown time for bridge A and bridge
B respectively when an overcurrent is detected (see Section 4.3: Non-dissipative
overcurrent detection and protection). The two current sources (SENSEA and SENSEB)
should be connected to power ground with a trace length as short as possible in the layout.
To increase noise immunity, unused logic pins are best connected to 5 V (high logic level) or
GND (low logic level) (see Table 3.).
It is recommended to keep power ground and signal ground separated on the PCB.
Table 7. Component values for typical application
Component
Value
C1
100
F
C2
100 nF
CBOOT
220 nF
CP
10 nF
CENA
5.6 nF
CENB
5.6 nF
CREF
68 nF
D1
1N4148
D2
1N4148
RCLA
5 k
RCLB
5 k
RENA
100 k
RENB
100 k
RP
100



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