INA6002AC1 datasheet(1/3 Pages) ISAHAYA

номер детали	INA6002AC1

подробное описание детали	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

PDF	3 Pages

Scroll/Zoom	100%

производитель	ISAHAYA [Isahaya Electronics Corporation]

домашняя страница	http://www.idc-com.co.jp

Logo

1 / 3 page

Notice : This is not a final specification.

Some parametric subject to change.

<SMALL-SIGNAL TRANSISTOR>

INA6002AC1

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON NPN EPITAXIAL TYPE

ISAHAYA ELECTRONICS CORPORATION

PRELIMINARY

DESCLIPTION

INA6002AC1 is a silicon PNP epitaxial type transistor.

It is designed with high voltage.

FEATURE

・Super mini package for easy mounting.

・Hige voltage VCEO=-300V

APPLICATION

DC/DC convertor, High voltage switching

OUTLINE DRAWING

Unit：mm

MAXIMUM RATINGS （Ta=25℃）

Symbol

Parameter

Ratings

Unit

MARKING

VCBO

Collector-Base Voltage

-300

V

VEBO

Emitter-Base Voltage

-7

V

VCEO

Collector-Emitter Voltage

-300

V

IC

Collector Current

-50

mA

PC

Collector Dissipation

150

mW

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55∼+150

℃

ELECTRIC CHARACTERISTICS （Ta=25℃）

Symbol

Parameter

Test conditions

Limits

Unit

Min

Typ

Max

V(BR)CBO

Collector-Base Breakdown Voltage

IC=-50µA，IE=0

-300

-

V

V(BR)EBO

Emitter-Base Breakdown Voltage

IE=-50µA，IC=0

-7

-

V

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC=-1mA，RBE=∞

-300

-

V

ICBO

Collector Cutoff Current

VCB=-300V，IE=0

-

-0.5

µA

IEBO

Emitter Cutoff Current

VEB=-5V，IC=0

-

-0.5

µA

hFE

DC Forward Current Gain

VCE=-10V，IC=-1mA

50

-

305

-

VCE(sat)

Collector-Emitter Saturation Voltage

IC=-10mA，IB=-1mA

-

-1.0

V

fT

Gain Bandwidth Product

VCE=-6V，IE=10mA

-

50

-

MHz

Cob

Collector Output Capacitance

VCB=-6V，IE=0，f=1MHz

-

2.6

-

pF

3 W

JEITA：SC-59

JEDEC：Similar toTO-236

2.8

0.65

1.5

0.65

(1)

(2)

(3)

TERMINAL CONNECTER

(1) BASE

(2) EMITTER

(3) COLLECTOR

Аналогичный номер детали - INA6002AC1

производитель	номер детали	датащи	подробное описание детали
Texas Instruments	INA600	2Mb / 39P	INA600 Low-Power, 2.7V to 40V Attenuating Difference Amplifier With >1MΩ Input Impedance for Cost-Optimized Designs REVISED AUGUST 2025
Isahaya Electronics Cor...	INA6001AC1	115Kb / 2P	FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
	INA6001AP1	117Kb / 2P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
	INA6005AC1	235Kb / 2P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
	INA6005AP1	118Kb / 2P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

More results

Аналогичное описание - INA6002AC1

производитель	номер детали	датащи	подробное описание детали
List of Unclassifed Man...	2SC5214	155Kb / 3P	For Low Frequency Amplify Application Silicon Npn Epitaxial Type
Isahaya Electronics Cor...	2SC5814	195Kb / 5P	For Low Frequency Amplify Application Silicon NPN Epitaxial Type
	2SC5938A	89Kb / 4P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
	2SC4154	155Kb / 3P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
	2SC3052	189Kb / 4P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
	2SC3928A	138Kb / 2P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
	2SC4155	138Kb / 2P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
	2SC4155A	139Kb / 2P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
	2SC5383	184Kb / 4P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
	INC6006AS1	151Kb / 4P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

More results

INA6002AC1 датащи(PDF) 1 Page - Isahaya Electronics Corporation

INA6002AC1 датащи(HTML) 1 Page - Isahaya Electronics Corporation

Аналогичный номер детали - INA6002AC1

Аналогичное описание - INA6002AC1

Html Pages

1 2 3

датащи скачать

ссылки URL