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MJ4032 датащи(PDF) 2 Page - Comset Semiconductor

номер детали MJ4032
подробное описание детали  MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS
PDF  3 Pages
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производитель  COMSET [Comset Semiconductor]
домашняя страница  http://comset.halfin.com
Logo COMSET - Comset Semiconductor

MJ4032 датащи(HTML) 2 Page - Comset Semiconductor

  MJ4032 Datasheet HTML 1Page - Comset Semiconductor MJ4032 Datasheet HTML 2Page - Comset Semiconductor MJ4032 Datasheet HTML 3Page - Comset Semiconductor  
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PNP MJ4030 – MJ4031 – MJ4032
29/10/2012
COMSET SEMICONDUCTORS
2 | 3
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
Max
Unit
VCEO
Collector-Emitter
Voltage (*)
IC=-100 mA, IB=0
MJ4030
-60
-
-
V
MJ4031
-80
-
-
MJ4032
-100
ICEO
Collector Cutoff Current
VCE=-30 Vdc, IB=0
MJ4030
-
-
-3.0
mA
VCE=-40 Vdc, IB=0
MJ4031
-
-
VCE=-50 V, IB=0
MJ4032
-
-
IEBO
Emitter Cutoff Current
VBE=-5.0 V, IC=0
MJ4030
-
-
-5.0
mA
MJ4031
MJ4032
ICER
Collector-Emitter Leakage
Current
VCB=-60 V
RBE=1.0 kΩ
MJ4030
-
-
-1.0
mA
VCB=-80 V
RBE=1.0 kΩ
MJ4031
-
-
VCB=-100 V
RBE=1.0 kΩ
MJ4032
VCB=-60 V
RBE=1.0 kΩ
TC=150°C
MJ4030
-
-
-5.0
VCB=-80 V
RBE=1.0 kΩ
TC=150°C
MJ4031
-
-
VCB=-100 V
RBE=1.0 kΩ
TC=150°C
MJ4032
VCE(SAT)
Collector-Emitter saturation
Voltage (*)
IC=-10 A
IB=-40 mA
MJ4030
-
-
-2.5
V
MJ4031
MJ4032
IC=-16 A
IB=-80 mA
MJ4030
-
-
-4.0
MJ4031
MJ4032
VBE
Base-Emitter Voltage (*)
IC=-10 A
VCE=-3.0V
MJ4030
-
-
-3
V
MJ4031
MJ4032
hFE
DC Current Gain (*)
VCE=-10 V
IC=-3.0 A
MJ4030
1000
-
-
-
MJ4031
MJ4032
(*) Pulse Width
≈ 300 µs, Duty Cycle ∠ 2.0%



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