MJ2500 datasheet(2/3 Pages) COMSET

номер детали	MJ2500

подробное описание детали	COMPLEMENTARY POWER DARLINGTONS

PDF	3 Pages

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производитель	COMSET [Comset Semiconductor]

домашняя страница	http://comset.halfin.com

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2 / 3 page

PNP MJ2500 – MJ2501

29/10/2012

COMSET SEMICONDUCTORS

2 | 3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

BVCEO

Collector-Emitter Breakdown

Voltage (*)

IC=-100mA

IB=0

MJ2500

-60

MJ2501

-80

ICEO

Collector Cutoff Current

VCE=-30 V

IB=0

MJ2500

-1.0

VCE=-40 V

IB=0

MJ2501

IEBO

Emitter Cutoff Current

VBE=-5.0 V

IC=0

MJ2500

-2.0

MJ2501

ICER

Collector-Emitter

Leakage Current

VCB=-60 V

RBE=1.0 kΩ

MJ2500

-1.0

VCB=-80 V

RBE=1.0 kΩ

MJ2501

VCB=-60 V

RBE=1.0 kΩ

TC=150°C

MJ2500

-5.0

VCB=-80 V

RBE=1.0 kΩ

TC=150°C

MJ2501

VCE(SAT)

Collector-Emitter saturation

Voltage (*)

IC=-5.0 A

IB=-20 mA

MJ2500

-2.0

MJ2501

IC=-10 A

IB=-50 mA

MJ2500

-4.0

MJ2501

VBE

Base-Emitter Voltage (*)

IC=-5.0 A

VCE=-3.0V

MJ2500

-3

MJ2501

hFE

DC Current Gain (*)

VCE=-3.0 V

IC=-5.0 A

MJ2500

1000

MJ2501

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 2.0%

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