BUR52 datasheet(2/3 Pages) COMSET

номер детали	BUR52

подробное описание детали	HIGH CURRENT NPN SILICON TRANSISTORS

PDF	3 Pages

Scroll/Zoom	100%

производитель	COMSET [Comset Semiconductor]

домашняя страница	http://comset.halfin.com

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2 / 3 page

BUR52

COMSET SEMICONDUCTORS

2/3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ICEO

Collector Cutoff Current

VCE = 250 V, (IB = 0)

IEBO

Emitter Cutoff Current

VBE = 7 V, (IC = 0)

0.2

µA

ICBO

Collector Cutoff Current

TCASE = 25°C

VCB = 350 V, (IE = 0)

0.2

TCASE = 125°C

VC = 350 V, (IE = 0)

VCEO(SUS)

Collector-Emitter Sustaining

Voltage (*)

IC = 200 A

250

VEBO

Emitter-Base Voltage

IC = 10 mA, (IC = 0)

VCE(SAT)

Collector-Emitter saturation

Voltage (*)

IC = 25 A, IB = 2 A

IC = 40 A, IB = 4 A

0.7

1.5

VBE(SAT)

Base-Emitter saturation Voltage

(*)

IC = 25 A, IB = 2 A

1.8

IC = 40 A, IB = 4 A

1.5

hFE

DC Current Gain (*)

VCE = 4 V, IC = 5 A

100

VCE = 4 V, IC = 40 A

Is/b

Second Breakdown Collector

Current

VCE = 20 V, t = 1 s

17.5

Transition - Frequency

VCE = 5 V, IC = 1 A

f = 1 MHz

MHz

ton

Turn-on time

VCC = 100 V

IC = 40 A ; IB1 = 4 A

0.3

µs

Storage Time

VCC = 100 V

IC = 40 A

IB1= 4 A, IB2 = -4 A

1.2

µs

Fall Time

0.2

0.6

Clamped Es/b Collector Current

Vclamp = 250 V

L = 500 µH

(*) Pulse duration = 300

µs, Duty Cycle ∠ 1.5 %

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