NPN BU508DF

15/10/2012

COMSET SEMICONDUCTORS

SEMICONDUCTORS

SILICON DIFFUSED POWER TRANSISTOR

The BU508DF is a NPN epitaxial-base transistor in TO3PFa package with integrated

efficiency diode.

It is intended for high voltage, high-speed.

Primarily for use in horizontal deflection circuits of colour television receivers.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

Collector-Base Voltage

1500

V

Collector-Emitter Voltage

700

V

Emitter-Base Voltage

5

V

Collector Current

8

A

Collector Current Peak

15

A

Base Current

4

A

Base Current Peak

6

A

Total Dissipation

34

W

Junction Temperature

150

°C

Storage Temperature range

-65 to +150

THERMAL CHARACTERISTICS

Symbol

Ratings

Conditions

Value

Unit

Typ.

Max

Junction To Heatsink

Without Heatsink Compound

-

3.7

K/W

Junction To Heatsink

With Heatsink Compound

-

2.8

Junction Ambient

In Free Air

35

-