BDX65 – A – B – C

24/10/2012

COMSET SEMICONDUCTORS

1 | 4

NPN SILICON DARLINGTON POWER TRANSISTOR

The BDX65, BDX65A, BDX65 and BDX65C are mounted in TO-3 metal package.

High current power darlingtons designed for power amplification and switching applications.

The complementary PNP are BDX64, BDX64A, BDX64B, BDX64C.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

Collector-Emitter Voltage

BDX65

60

V

BDX65A

80

BDX65B

100

BDX65C

120

Collector-BaseVoltage

BDX65

80

V

BDX65A

100

BDX65B

120

BDX65C

140

Emitter-Base Voltage

5.0

V

Collector Current

12

A

16

Base Current

0.2

A

Power Dissipation

117

W

Junction Temperature

-55 to +200

°C

Storage Temperature

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

Thermal Resistance, Junction to Case

1.5

°C/W