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MIC4604 датащи(PDF) 15 Page - Micrel Semiconductor

номер детали MIC4604
подробное описание детали  85V Half Bridge MOSFET Drivers with up to 16V Programmable Gate Drive
PDF  18 Pages
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производитель  MICREL [Micrel Semiconductor]
домашняя страница  http://www.micrel.com
Logo MICREL - Micrel Semiconductor

MIC4604 датащи(HTML) 15 Page - Micrel Semiconductor

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Micrel, Inc.
MIC4604
June 25, 2013
15
Revision 1.0
Figure 13. Type I Inverter Topology
As shown in Figure 13, Type I is a dual-stage topology
where line
voltage is converted to DC through a
transformer to charge the storage batteries. When a power
failure is detected, the stored DC energy is converted to
AC through another transformer to drive the AC loads
connected to the inverter output. This method is simplest
to design but tends to be bulky and expensive because it
uses two transformers.
Type II is a single-stage topology that uses only one
transformer to charge the bank of batteries to store the
energy. During a power outage, the same transformer is
used to power the line voltage. The Type II switches at a
higher frequency compared to the Type I topology to
maintain a small transformer size.
Both types require a half bridge or full bridge topology to
boost the DC to AC. This application can use two
MIC4604s. The 85V operating voltage offers enough
margin to address all of the available banks of batteries
commonly used in inverter applications. The 85V operating
voltage allows designers to increase the bank of batteries
up to 72V, if desired. The MIC4604 can sink as much as
1A, which is enough current to overcome the MOSFET’s
input capacitance and switch the MOSFET up to 50kHz.
This makes the MIC4604 an ideal solution for inverter
applications.
As with all half bridge and full bridge topologies, cross
conduction is a concern to inverter manufactures because
it can cause catastrophic failure. This can be remedied by
adding the appropriate dead time between transitioning
from the high-side MOSFET to the low-side MOSFET and
vice versa.
Layout Guidelines
Use the following layout guidelines for optimum circuit
performance:
•
Place the VDD and HB bypass capacitors close to the
supply and ground pins. It is critical that the etch
length between the high side decoupling capacitor (CB)
and the HB and HS pins be minimized to reduce lead
inductance.
•
Use a ground plane to minimize parasitic inductance
and impedance of the return paths. The MIC4604 is
capable of greater than 1A peak currents and any
impedance between the MIC4604, the decoupling
capacitors, and the external MOSFET will degrade the
performance of the driver.
•
Trace out the high di/dt and dv/dt paths, as shown in
Figure 14 and Figure 15, and minimize etch length and
loop area for these connections. Minimizing these
parameters decreases the parasitic inductance and
the radiated EMI generated by fast rise and fall times.
A typical layout of a synchronous Buck converter power
stage (Figure 14) is shown in Figure 15 .
Figure 14. Synchronous Buck Converter Power Stage
The high-side MOSFET drain connects to the input supply
voltage (drain) and the source connects to the switching
node. The low-side MOSFET drain connects to the
switching node and its source is connected to ground. The
buck converter output inductor (not shown) connects to the
switching node. The high-side drive trace, HO, is routed on
top of its return trace, HS, to minimize loop area and
parasitic inductance. The low-side drive trace LO is routed
over the ground plane to minimize the impedance of that
current path. The decoupling capacitors, CB and CVDD, are
placed to minimize etch length between the capacitors and
their respective pins. This close placement is necessary to
efficiently charge capacitor CB when the HS node is low.
All
traces
are
0.025in
wide
or
greater
to
reduce
impedance. CIN is used to decouple the high current path
through the MOSFETs.



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