PNP BD684 TO3 (Temporary part number)

Temporary datasheet

23/10/2012

COMSET SEMICONDUCTORS

1 | 3

SILICON DARLINGTON POWER TRANSISTORS

PNP eptaxial-base transistors in monolithic Darlington circuit for audio and video

applications.

They are mounted in Jedec TO-3 metal package.

Compliance to RoHS

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

Collector-Emitter Voltage

-140

V

Collector-Base Voltage

-140

V

Emitter-Base Voltage

-5

V

Collector Current

-4

A

-6

Base current (peak value)

-0.1

A

Total power Dissipation

65

W-

Junction Temperature

150

°C

Storage Temperature

-65 to +150

°C

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

Thermal Resistance, Junction to mouting base

3.12

K/W

Thermal Resistance, Junction to ambient in free air

100

K/W