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183T2 датащи(PDF) 2 Page - Comset Semiconductor

номер детали 183T2
подробное описание детали  NPN SILICON TRANSISTORS, DIFFUSED MESA.
PDF  3 Pages
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производитель  COMSET [Comset Semiconductor]
домашняя страница  http://comset.halfin.com
Logo COMSET - Comset Semiconductor

183T2 датащи(HTML) 2 Page - Comset Semiconductor

  183T2 Datasheet HTML 1Page - Comset Semiconductor 183T2 Datasheet HTML 2Page - Comset Semiconductor 183T2 Datasheet HTML 3Page - Comset Semiconductor  
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BDY26 – 183T2
BDY27 – 184T2
BDY28 – 185T2
2 | 3
24/09/2012
COMSET SEMICONDUCTORS
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ MAx
Unit
VCEO(BR)
Collector-Emitter
Breakdown Voltage (*)
IC=50 mA
IB=0
BDY26, 183T2
180
-
-
V
BDY27, 184T2
200
-
-
BDY28A, 185T2A
250
-
-
BDY28B, 185T2B
250
-
-
BDY28C, 185T2C
220
-
-
V(BR)CBO
Collector-Base
Breakdown Voltage (*)
IC=3 mA
BDY26, 183T2
300
-
-
V
BDY27, 184T2
400
-
-
BDY28, 185T2
500
-
-
ICEO
Collector-Emitter Cutoff
Current
VCE=180 V
BDY26
-
-
1.0
mA
VCE=200 V
BDY27
-
-
VCE=250 V
BDY28
-
-
IEBO
Emitter-Base Cutoff
Current
VEB=10 V
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
-
-
1.0
mA
ICES
Collector-Emitter Cutoff
Current
VCE=250 V
VBE=0 V
BDY26, 183T2
-
-
1.0
mA
VCE=300 V
VBE=0 V
BDY27, 184T2
-
-
VCE=400 V
VBE=0 V
BDY28, 185T2
-
-
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
IC=2.0 A
IB=0.25 A
BDY26, 183T2
-
-
0.6
V
BDY27, 184T2
-
-
BDY28, 185T2
-
-
VBE(SAT)
Base-Emitter saturation
Voltage (*)
IC=2.0 A
IB=0.25 A
BDY26, 183T2
-
-
1.2
V
BDY27, 184T2
-
-
BDY28, 185T2
-
-
hFE
DC Current Gain
VCE=4 V
IC=1 A
A
-
55
-
-
B
-
65
-
C
-
90
-
VCE=4 V
IC=2 A
A
15
20
45
B
30
45
90
C
75
82
180
fT
Transition Frequency
VCE= 15 V, IC= 0.5 A, f= 10 MHz
10
-
-
MHz
td + tr
Turn-on time
IC= 5 A, IB= 1 A
-
0.3
0.5
µs
ts + tf
Turn-off time
IC= 5 A, IB1= 1 A, IB2= -0.5 A
-
1.5
2.0
µs
(*) Pulse Width
≈ 300 µs, Duty Cycle ∠ 2%



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