2N4902 datasheet(2/3 Pages) COMSET

2 / 3 page

2N4901 – 2N4902 – 2N4903

17/10/2012

COMSET SEMICONDUCTORS

2 3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VCEO(BR)

Collector-Emitter

Breakdown Voltage)

IC=200 mAdc, IB=0

2N4901

-40

2N4902

-60

2N4903

-80

ICBO

Collector-Base cut-off

Current

VCE=-40 V, IE=0

2N4901

0.1

VCE=-60 V, IE=0

2N4902

0.1

VCE=-80 V, IE=0

2N4903

0.1

ICEX

Collector Cutoff Current

VCE=-40 V, VEB=1.5 V

2N4901

-0.1

VCE=-40 V, VEB=1.5 V

TCASE=150°C

-2.0

VCE=-60 V, VEB=1.5 V

2N4902

-0.1

VCE=-60 V, VEB=1.5 V

TCASE=150°C

-2.0

VCE=-80 V, VEB=1.5 V

2N4903

-0.1

VCE=-80 V, VEB=1.5 V

TCASE=150°C

-2.0

IEBO

Emitter Cutoff Current

VBE=5.0 V, IC=0

2N4901

-1.0

2N4902

2N4903

hFE

DC Current Gain (*)

VCE=-2.0 V, IC=-1.0 A

2N4901

2N4902

2N4903

VCE=-2.0 V, IC=-5.0 A

2N4901

2N4902

2N4903

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC=-1.0 A, IB=-0.1 A

2N4901

-0.4

2N4902

2N4903

IC=-5.0 A, IB=-1.0 A

2N4901

-1.5

2N4902

2N4903

VBE

Base-Emitter Voltage (*) IC=-1.0 A, VCE=-2.0 V

2N4901

-1.2

2N4902

2N4903

VBE(SAT)

Base-Emitter Saturation

Voltage (*)

IC=-5.0 A, IB=-1.0 A

2N4901

1.7

2N4902

2N4903

Hfe

Forward Current

Transfer Ratio (*)

VCE=-10 V, IC=-0.5 A

f =1MHz

Transition Frequency

VCE=-10 V, IC=-1.0 A, f=1.0 kHz

MHz

Is/b

Second Breakdown

Collector Current

t=1 s, VCE=40 V, TCASE=100°C

1.25

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 2.0%

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