3

Typical Parameters at T

Part Number

Series Resistance

Carrier Lifetime

Reverse Recovery Time

Total

Capacitance

HSMP-

R

W (ns)

T

C

381x

53

1500

300

0.27 @ 50 V

Test Conditions

I

F

= 1 mA

f = 100 MHz

I

F

= 50 mA

I

R

= 250 mA

V

R

= 10 V

I

F

= 20 mA

90% Recovery

f = 1 MHz

Typical Parameters at T

10000

1000

100

10

1

0.01

0.1

1

10

100

T

T

T

Figure 2. RF Resistance vs. Forward

Bias Current, f = 100MHz

0.15

0.30

0.25

0.20

0.35

0.40

0.45

02

6

410 12

816

14

18 20

REVERSE VOLTAGE (V)

Figure 1. RF Capacitance vs. Reverse

Bias.

1 MHz

30 MHz

frequency>100 MHz

120

110

100

90

80

70

60

50

40

1000

100

10

Diode Mounted as a

Series Attenuator

in a 50 Ohm Microstrip

and Tested at 123 MHz

DIODE RF RESISTANCE (OHMS)

Figure 3. 2nd Harmonic Input

Intercept Point vs. Diode RF

Resistance.

100

10

1

0.1

0.01

0

0.2

0.4

0.6

0.8

1.0

1.2

Figure 4. Forward Current vs. Forward

Voltage.

125 C

25 C –50 C

INPUT

RF IN/OUT

Figure 5. Four Diode

π Attenuator. See Application Note 1048

for Details.

FIXED

BIAS

VOLTAGE

VARIABLE BIAS

Typical Applications for Multiple Diode Products

Notes:

3. Typical values were derived using limited samples during initial product characterization and may not be representative of the overall distribution.