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DB2X4100L датащи(PDF) 2 Page - Panasonic Semiconductor

номер детали DB2X4100L
подробное описание детали  Silicon epitaxial planar type For high frequency rectification
PDF  5 Pages
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производитель  PANASONIC [Panasonic Semiconductor]
домашняя страница  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

DB2X4100L датащи(HTML) 2 Page - Panasonic Semiconductor

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Product Standards
Schottky Barrier Diode
DB2X41400L
Electrical Characteristics Ta = 25
C  3 C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on
the charge of a human body and the leakage of current from the operating equipment.
3. *1 trr test circuit
Page
IF = IR = 100 mA, Irr = 10 mA
pF
Reverse recovery time
*1
trr
30
ns
RL = 100 Ω
Terminal capacitance
Ct
μA
200
Reverse current
IR
VR = 40 V
VR = 10 V, f = 1 MHz
Parameter
Symbol
Conditions
0.42
Forward voltage
VF
IF = 2A
Min
Unit
Max
2
70
of 4
Typ
0.49
V
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 μs
tr = 0.35 ns
δ = 0.05
IF = 100 mA
IR = 100 mA
RL = 100 Ω
10%
Irr = 10 mA
tr
tp
trr
VR
IF
t
t
A
Input Pulse
Output Pulse
Doc No. TT4-EA-12043
Revision. 3
Established : 2009-12-21
Revised
: 2013-04-26



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