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DB2X4100L датащи(PDF) 2 Page - Panasonic Semiconductor |
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DB2X4100L датащи(HTML) 2 Page - Panasonic Semiconductor |
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2 / 5 page ![]() Product Standards Schottky Barrier Diode DB2X41400L Electrical Characteristics Ta = 25 C 3 C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *1 trr test circuit Page IF = IR = 100 mA, Irr = 10 mA pF Reverse recovery time *1 trr 30 ns RL = 100 Ω Terminal capacitance Ct μA 200 Reverse current IR VR = 40 V VR = 10 V, f = 1 MHz Parameter Symbol Conditions 0.42 Forward voltage VF IF = 2A Min Unit Max 2 70 of 4 Typ 0.49 V Bias Application Unit (N-50BU) 90% Pulse Generator (PG-10N) Rs = 50 Ω Wave Form Analyzer (SAS-8130) Ri = 50 Ω tp = 2 μs tr = 0.35 ns δ = 0.05 IF = 100 mA IR = 100 mA RL = 100 Ω 10% Irr = 10 mA tr tp trr VR IF t t A Input Pulse Output Pulse Doc No. TT4-EA-12043 Revision. 3 Established : 2009-12-21 Revised : 2013-04-26 |
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