CSD18537NKCS datasheet(1/9 Pages) TI

номер детали	CSD18537NKCS

подробное описание детали	60-V, N-Channel NexFET Power MOSFETs

PDF	9 Pages

Scroll/Zoom	100%

производитель	TI [Texas Instruments]

домашняя страница	http://www.ti.com

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0

2

4

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10

12

14

16

18

20

VGS - Gate-to- Source Voltage (V)

TC = 25°C Id = 25A

TC = 125ºC Id = 25A

G001

0

1

2

3

4

5

6

7

8

9

10

0

3

6

9

12

15

Qg - Gate Charge (nC)

ID = 25A

VDS = 30V

G001

Gate

(Pin 1)

Drain (Pin 2)

Source (Pin 3)

CSD18537NKCS

www.ti.com

SLPS390 – JUNE 2013

60-V, N-Channel NexFET™ Power MOSFETs

Check for Samples: CSD18537NKCS

PRODUCT SUMMARY

1

FEATURES

TA = 25°C

TYPICAL VALUE

UNIT

2

•

Ultra Low Qg and Qgd

VDS

Drain to Source Voltage

60

V

•

Low Thermal Resistance

Qg

Gate Charge Total (10V)

14

nC

•

Avalanche Rated

Qgd

Gate Charge Gate to Drain

2.3

nC

VGS = 6V

14

m

Ω

•

Pb Free Terminal Plating

RDS(on)

Drain to Source On Resistance

VGS = 10V

11

m

Ω

•

RoHS Compliant

VGS(th)

Threshold Voltage

3.0

V

•

Halogen Free

•

TO-220 Plastic Package

ORDERING INFORMATION

Device

Package

Media

Qty

Ship

APPLICATIONS

TO-220 Plastic

CSD18537NKCS

Tube

50

Tube

Package

•

High Side Synchronous Buck Converter

•

Motor Control

ABSOLUTE MAXIMUM RATINGS

TA = 25°C

VALUE

UNIT

DESCRIPTION

VDS

Drain to Source Voltage

60

V

The NexFET™ power MOSFET has been designed

VGS

Gate to Source Voltage

±20

V

to minimize losses in power conversion applications.

Continuous Drain Current (Package limited),

50

TC = 25°C

Pin Out

Continuous Drain Current (Silicon limited),

ID

54

A

TC = 25°C

Continuous Drain Current (Silicon limited),

34

TC = 100°C

IDM

Pulsed Drain Current (1)

91

A

PD

Power Dissipation

79

W

TJ,

Operating Junction and Storage

–55 to 150

°C

TSTG

Temperature Range

Avalanche Energy, single pulse

EAS

55

mJ

ID = 33A, L = 0.1mH, RG = 25Ω

(1) Pulse duration

≤300μs, duty cycle ≤2%

RDS(on) vs VGS

GATE CHARGE

1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2

NexFET is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Аналогичный номер детали - CSD18537NKCS

производитель	номер детали	датащи	подробное описание детали
Inchange Semiconductor ...	CSD18537NKCS	321Kb / 2P	isc N-Channel MOSFET Transistor
Texas Instruments	CSD18537NKCS	923Kb / 14P	CSD18537NKCS 60V N-Channel NexFET™ Power MOSFET REVISED APRIL 2024
Texas Instruments	CSD18537NKCS.B	923Kb / 14P	CSD18537NKCS 60V N-Channel NexFET™ Power MOSFET REVISED APRIL 2024

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Аналогичное описание - CSD18537NKCS

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Texas Instruments	CSD18532KCS	928Kb / 10P	60-V, N-Channel NexFET Power MOSFETs
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More results

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Аналогичный номер детали - CSD18537NKCS

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