MJD32C datasheet(1/4 Pages) MCC

номер детали	MJD32C

подробное описание детали	Silicon PNP epitaxial planer Transistors

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производитель	MCC [Micro Commercial Components]

домашняя страница	http://www.mccsemi.com

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Silicon

PNP epitaxial planer

Transistors

Features

Maximum Ratings @ 25OC Unless Otherwise Specified

Symbol

Rating

Unit

VCEO

Collector-Emitter Voltage

-100

V

VCBO

Collector-Base Voltage

-100

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-3

A

PC

Collector Dissipation

TJ

Operating Junction Temperature

150

TSTG

Storage Temperature

-65 to +150

Electrical Characteristics @ 25OC Unless Otherwise Specified

Symbol

Parameter

Min

Typ

Max

Units

V(BR)CEO

Collector-Emitter Breakdown Voltage

(IC=-30mAdc, IB=0)

-100

---

Vdc

V(BR)CBO

Collector-Base Breakdown Voltage

(IC=-1mAdc, IE=0)

-100

---

Vdc

V(BR)EBO

Emitter-Base Breakdown Voltage

(IE=-1mAdc, IC=0)

-5

---

Vdc

ICEO

Collector Cutoff Current

(VCE=-60Vdc, IB=0)

---

-50

uAdc

IEBO

Emitter Cutoff Current

(VEB=-5Vdc, IC=0)

---

-1

mAdc

hFE

DC Current Gain

VCE(sat)

Collector-Emitter Saturation Voltage

(IC=-3Adc, IB=-0.375Adc) (note 1)

---

----

-1.2

Vdc

fT

Transition frequency

(VCE=-10Vdc,IC=-0.5Adc,fT=1KHz)

3

---

MHZ

Revision:

A

20

11/01/01

omponents

20736 Marilla

Street Chatsworth

!"#

$% !"#

MCC

TM

Micro Commercial Components

www.mccsemi.com

1 of 4

MJD

32C

ICES

Collector Cutoff Current

(VCE=-100Vdc, VEB=0)

(IC=-3Adc, VCE=-4Vdc)

VBE(on)

Base-Emitter Voltage

(IC=-3Adc, VCE=-4Vdc ) (note 1)

---

-1.8

Vdc

•

Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS

Compliant. See ordering information)

•

Electrically similar to popular TIP32 Series

•

Designed for general purpose amplifier and low speed switching

applications.

1.25

W

---

-20

uAdc

(IC=-1Adc, VCE=-4Vdc)

25

10

---

50

---

1.

Pulse Test: PW≤300µs, Duty Cycle≤2%

Note:

Maximum Thermal Resistance: 100

oC/W Junction to Ambient

•

DIMENSIONS

MM

DIM

MIN

MAX

MIN

MAX

NOTE

A

0.087

0.094

2.20

2.40

B

0.000

0.005

0.00

0.13

C

0.026

0.034

0.66

0.86

D

0.018

0.023

0.46

0.58

E

0.256

0.264

6.50

6.70

F

0.201

0.215

5.10

5.46

G

0.190

4.83

H

0.236

0.244

6.00

6.20

J

0.386

0.409

9.80

10.40

PIN 1.

BASE

PIN 2.

COLLECTOR

PIN 3.

EMITTER

INCHES

O

0.043

0.051

1.10

1.30

Q

A

D

B

L

G

V

K

C

I

J

H

O

M

F

1

2

3

I

0.086

0.094

2.18

2.39

K

0.114

2.90

L

0.055

0.067

1.40

1.70

M

0.063

1.60

Q

0.000

0.012

0.00

0.30

V

0.211

5.35

DPAK

E

•

Epoxy meets UL 94 V-0 flammability rating

•

Moisture Sensitivity Level 1

Аналогичный номер детали - MJD32C

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	MJD32C	150Kb / 6P	SILICON POWER TRANSISTORS 1998
STMicroelectronics	MJD32C	65Kb / 5P	COMPLEMENTARY SILICON POWER TRANSISTORS May-1999
Fairchild Semiconductor	MJD32C	49Kb / 5P	General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications
ON Semiconductor	MJD32C	81Kb / 8P	Complementary Power Transistors June, 2005 ??Rev. 6
STMicroelectronics	MJD32C	173Kb / 9P	Low voltage PNP power transistor 25-Jun-2007

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