L6562

10/16

the output of the multiplier in the proximity of the line voltage zero-crossings. This offset is reduced as the

instantaneous line voltage increases, so that it becomes negligible as the line voltage moves toward the

top of the sinusoid.

To maximally benefit from the THD optimizer circuit, the high-frequency filter capacitor after the bridge rec-

tifier should be minimized, compatibly with EMI filtering needs. A large capacitance, in fact, introduces a

conduction dead-angle of the AC input current in itself - even with an ideal energy transfer by the PFC pre-

regulator - thus making the action of the optimizer circuit little effective.

Figure 23. Typical application circuit (250W, Wide-range mains)

Figure 24. Demo board (EVAL6562-80W, Wide-range mains): Electrical schematic

NTC

2.5

Ω

8

3

BRIDGE

STBR606

R1

1.5 M

Ω

C1

1 µF

400V

R3

22 k

Ω

C29

22 µF

25V

FUSE

5A/250V

R4

180 k

Ω

D8

1N4150

D2

1N5248B

R14

100

Ω

C5 12 nF

R6

68 k

Ω

T

5

6

L6562

7

21

R7

10

Ω

MOS

STP12NM50

7 °C/W heat sink

4

R11

750 k

Ω

C6

100 µF

450V

Vo=400V

Po=250W

-

Vac

(85V to 265V)

R9

0.33

Ω

1W

R13

9.53 k

Ω

+

-

C4

100 nF

C2

10nF

D1

STTH5L06

R50 10 k

Ω

C3 2.2 µF

R2

1.5 M

Ω

R5

180 k

Ω

R10

0.33

Ω

1W

R12

750 k

Ω

C23

680 nF

Boost Inductor Spec: EB0057-C (COILCRAFT)

D3 1N5406

NTC

2.5

Ω

8

3

BRIDGE

DF06M

R1

750 k

Ω

C1

0.47 µF

400V

R3

10 k

Ω

C29

22 µF

25V

FUSE

4A/250V

R4

180 k

Ω

D8

1N4150

D2

1N5248B

R14

100

Ω

C5 12 nF

R6

68 k

Ω

T

5

6

L6562

7

21

R7

33

Ω

MOS

STP8NM50

4

R11

750 k

Ω

C6

47 µF

450V

Vo=400V

Po=80W

-

Vac

(85V to 265V)

R9

0.82

Ω

0.6 W

R13

9.53 k

Ω

+

-

C4

100 nF

C2

10nF

D1

STTH1L06

R50 12 k

Ω

C3 680 nF

R2

750 k

Ω

R5

180 k

Ω

R10

0.82

Ω

0.6 W

R12

750 k

Ω

C23

330 nF

Boost Inductor Spec (ITACOIL E2543/E)

E25x13x7 core, 3C85 ferrite

1.5 mm gap for 0.7 mH primary inductance

Primary: 105 turns 20x0.1 mm

Secondary: 11 turns 0.1 mm