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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM8AF6126 датащи(PDF) 56 Page - STMicroelectronics |
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STM8AF6126 датащи(HTML) 56 Page - STMicroelectronics |
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56 / 89 page  Electrical characteristics STM8AF61xx, STM8AF62xx 56/89 Doc ID 14952 Rev 6 HSE oscillator critical gm formula The crystal characteristics have to be checked with the following formula: g m g mcrit » where gmcrit can be calculated with the crystal parameters as follows: g mcrit 2 Π × HSE f × () 2 R m × 2Co C + () 2 = Rm: Notional resistance (see crystal specification) Lm: Notional inductance (see crystal specification) Cm: Notional capacitance (see crystal specification) Co: Shunt capacitance (see crystal specification) CL1 = CL2 = C: Grounded external capacitance 10.3.4 Internal clock sources and timing characteristics Subject to general operating conditions for VDD and TA. High speed internal RC oscillator (HSI) Table 32. HSI oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - 16 - MHz ACCHS HSI oscillator user trimming accuracy Trimmed by the application for any VDD and TA conditions -1(1) 1. Depending on option byte setting (OPT3 and NOPT3) -1(1) % -0.5(1) -0.5(1) HSI oscillator accuracy (factory calibrated) VDD = 3.0 V ≤ VDD ≤ 5.5 V, -40 °C ≤ TA ≤ 150 °C -5 - 5 tsu(HSI) HSI oscillator wakeup time - - 2(2) 2. Guaranteed by characterization, not tested in production µs |
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