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VRF3933 датащи(PDF) 3 Page - Microsemi Corporation

номер детали VRF3933
подробное описание детали  RF POWER VERTICAL MOSFET
PDF  6 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

VRF3933 датащи(HTML) 3 Page - Microsemi Corporation

  VRF3933 Datasheet HTML 1Page - Microsemi Corporation VRF3933 Datasheet HTML 2Page - Microsemi Corporation VRF3933 Datasheet HTML 3Page - Microsemi Corporation VRF3933 Datasheet HTML 4Page - Microsemi Corporation VRF3933 Datasheet HTML 5Page - Microsemi Corporation VRF3933 Datasheet HTML 6Page - Microsemi Corporation  
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0
0.05
0.10
0.15
0.20
0.25
0.30
10-5
10-4
10-3
10-2
10
1.0
10
-1
Peak T J = P DM x Z θJC + TC
Duty Factor D =
t1/t2
t2
t1
Note:
t1 = Pulse Duration
RECTANGULAR PULSE DURATION (seconds)
Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
44
46
48
50
52
54
56
58
23
24
25
26
27
28
29
17
22
27
32
37
0
10
20
30
40
50
60
70
80
0
100
200
300
400
500
600
17
22
27
32
37
P
IN, (dBm)
Figure 6. P
OUT and Gain vs PIN
P
IN, (dBm)
Figure 7. Eff and P
OUT vs. PIN
Po W
OutEff
Freq=30MHz
Freq=30MHz
FIGURE 5b, TRANSIENT THERMAL IMPEDANCE MODEL
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Z
IN - Gate shunted with 25Ω
I
dq = 250mA
Z
OL - Conjugate of optimum load for 300 Watts output at Vdd=50V
Freq. (MHz)
Z
in
Z
out
2
21 - j 8.5
14.1 - j 0.6
13.5
4.5 - j 6.5
12.9 - j 4
27.1
2.9 - j 3.1
9.7 - j 6.6
40.7
2.5 - j 2
7.6 - j 7
65
2.4 - j 2.07
4.5 - j 6.6
0.3
D = 0.9
0.7
SINGLE PULSE
0.5
0.1
0.05
Pout
Gain
VRF3933(MP)
0.0202
0.0507
0.1199
0.00647F
0.02043F
0.2421F
7.962F
TJ (°C)
0.0792
TC (°C)



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