1

Symbol

Parameter

Value

Units

P

D

Power Dissipation

200

mW

T

J

Junction Temperature

150

℃

T

STG

Storage Temperature

-65 to +150

℃

I

ZM

Maximum Regulator Current

P

mA

Zzt(Ω)

Zzk(Ω)

IR(μA)

Type

Number

Device

Marking

min.

typ.

max.

max.

Iz(mA)

max.

Izk(mA)

max.

VR(V)

M3Z3V6B

3.6

3.53

3.60

3.67

90

5

600

1

2

1.0

M3Z3V9B

3.9

3.82

3.90

3.98

90

5

600

1

2

1.0

M3Z4V3B

4.3

4.21

4.30

4.39

80

5

600

1

1

1.0

M3Z4V7B

4.7

4.61

4.70

4.79

70

5

500

1

0.5

1.0

M3Z5V1B

5.1

5.00

5.10

5.20

50

5

480

1

0.1

1.0

M3Z5V6B

5.6

5.49

5.60

5.71

30

5

400

1

0.1

1.0

M3Z6V2B

6.2

6.08

6.20

6.32

10

5

150

1

0.1

2.0

M3Z6V8B

6.8

6.66

6.80

6.94

10

5

80

1

0.1

3.0

M3Z7V5B

7.5

7.35

7.50

7.65

10

5

50

1

0.1

5.0

M3Z8V2B

8.2

8.04

8.20

8.36

10

5

50

1

0.1

6.1

M3Z9V1B

9.1

8.92

9.10

9.28

10

5

50

1

0.1

6.8

Continued next page

Zener Diodes / DATA SHEET (Preliminary)

M3Z3V6B – M3Z36VB series

◇ Constant Voltage control

◇ Wide Voltage Range Selection 3.6V to 36V

◇ Vz tolerance selection of ±2% (B series)

◇ SOD323F Thin SMD package (Fig-1)

◇ RoHS compliant / Green EMC

◇ Matte Tin (Sn) Lead finish

◇ Moisture Level Sensitivity 1

◇ Cathode Band / Device marking

Refer to table list

0.65mm Typ

Fig.-1 Package. height

5

ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳ

星合电子

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