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S12SPIV2D датащи(PDF) 100 Page - Freescale Semiconductor, Inc |
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S12SPIV2D датащи(HTML) 100 Page - Freescale Semiconductor, Inc |
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100 / 126 page ![]() MC9S12DJ64 Device User Guide — V01.17 100 The setup time can be ignored for this operation. A.3.1.4 Mass Erase Erasing a NVM block takes: The setup time can be ignored for this operation. A.3.1.5 Blank Check The time it takes to perform a blank check on the Flash or EEPROM is dependant on the location of the first non-blank word starting at relative address zero. It takes one bus cycle per word to verify plus a setup of the command. Table A-11 NVM Timing Characteristics Conditions are shown in Table A-4 unless otherwise noted Num C Rating Symbol Min Typ Max Unit 1 D External Oscillator Clock fNVMOSC 0.5 50 1 NOTES: 1. Restrictions for oscillator in crystal mode apply! MHz 2 D Bus frequency for Programming or Erase Operations fNVMBUS 1 MHz 3 D Operating Frequency fNVMOP 150 200 kHz 4 P Single Word Programming Time tswpgm 46 2 2. Minimum Programming times are achieved under maximum NVM operating frequency fNVMOP and maximum bus frequency fbus. 74.5 3 3. Maximum Erase and Programming times are achieved under particular combinations of fNVMOP and bus frequency fbus. Refer to formulae in Sections A.3.1.1 - A.3.1.4 for guidance. µs 5D Flash Burst Programming consecutive word 4 4. Burst Programming operations are not applicable to EEPROM tbwpgm 20.4 2 31 3 µs 6D Flash Burst Programming Time for 32 Words 4 tbrpgm 678.4 2 1035.5 3 µs 7 P Sector Erase Time tera 20 5 5. Minimum Erase times are achieved under maximum NVM operating frequency fNVMOP. 26.7 3 ms 8 P Mass Erase Time tmass 100 5 133 3 ms 9 D Blank Check Time Flash per block tcheck 11 6 6. Minimum time, if first word in the array is not blank 32778 7 7. Maximum time to complete check on an erased block tcyc 10 D Blank Check Time EEPROM per block tcheck 11 6 20587 tcyc t era 4000 1 f NVMOP --------------------- ⋅ ≈ t mass 20000 1 f NVMOP --------------------- ⋅ ≈ t check location t cyc 10 t cyc ⋅ + ⋅ ≈ |
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