IXTH02N250 datasheet(1/5 Pages) IXYS

номер детали	IXTH02N250

подробное описание детали	High Voltage Power MOSFETs

PDF	5 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

2500

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

2500

V

GSS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C

200

mA

I

DM

T

C = 25°C, Pulse Width Limited by TJM

600

mA

P

D

T

C = 25°C83

W

T

J

- 55 ... +150

°C

T

JM

150

°C

T

stg

- 55 ... +150

°C

T

L

1.6mm (0.062 in.) from Case for 10s

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting Torque (TO-247)

1.13 / 10

Nm/lb.in

F

C

Mounting Force (PLUS220 & TO-263)

11..65 / 25..14.6

N/lb.

Weight

TO-263

2.5

g

PLUS220

4.0

g

TO-247

6.0

g

DS100187C(04/12)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

2500

V

GS(th)

V

DS = VGS, ID = 250μA

2.5

4.5

V

I

GSS

V

GS = ±20V, VDS = 0V

±100 nA

I

DSS

V

DS = 0.8 • VDSS

5

μA

T

J = 125°C

500

μA

R

DS(on)

V

GS = 10V, ID = 50mA, Note 1

450

Ω

High Voltage

Power MOSFETs

IXTA02N250

IXTH02N250

IXTV02N250S

V

DSS

= 2500V

I

D25

= 200mA

R

DS(on) ≤

≤≤≤≤ 450Ω

Ω

N-Channel Enhancement Mode

Fast Intrinsic Diode

Features

Fast Intrinsic Diode

Low Package Inductance

Advantages

Easy to Mount

Space Savings

Applications

High Voltage Power Supplies

Capacitor Discharge

Pulse Circuits

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-247 (IXTH)

PLUS220SMD (IXTV_S)

G

S

D (Tab)

G

S

D

D (Tab)

G

S

TO-263 (IXTA)

Аналогичный номер детали - IXTH02N250

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IXTH02N250 датащи(PDF) 1 Page - IXYS Corporation

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Аналогичный номер детали - IXTH02N250

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