©2001 Fairchild Semiconductor Corporation

HUF76013P3, HUF76013D3S Rev. B

HUF76013P3, HUF76013D3S

20A, 20V, 0.022 Ohm, N-Channel, Logic

Level Power MOSFETs

The HUF76013 is an application-specific MOSFET

optimized for switching when used as the upper switch in

synchronous buck applications. The low gate charge and low

input capacitance results in lower driver and lower switching

losses thereby increasing the overall system efficiency.

Symbol

Packaging

Features

• 20A, 20V

• PWM Optimized for Synchronous Buck Applications

•Fast Switching

• Low Gate Charge

• Low Capacitance

HUF76013D3S

JEDEC TO-252AA

HUF76013P3

JEDEC TO-220AB

D

G

S

GATE

SOURCE

DRAIN (FLANGE)

DRAIN

(FLANGE)

DRAIN

SOURCE

GATE

Ordering Information

PART NUMBER

PACKAGE

BRAND

HUF76013P3

TO-220AB

76013P

HUF76013D3S

TO-252AA

76013D

NOTE: When ordering, use the entire part number. Add the suffix T to

obtain the HUF76013D3S in tape and reel, e.g., HUF76013D3ST.

Absolute Maximum Ratings

SYMBOL

PARAMETER

HUF76013P3,

HUF76013D3S

UNITS

Drain to Source Voltage (Note 1)

20

V

20

V

Gate to Source Voltage

±16

V

Drain Current

Pulsed Drain Current

20

20

Figure 4

A

A

A

Power Dissipation

50

0.4

W

Operating and Storage Temperature

-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s

Package Body for 10s, See Techbrief TB334

300

260

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case, TO-220, TO-252

2.5

Thermal Resistance Junction to Ambient TO-220

62

Thermal Resistance Junction to Ambient TO-252

100

NOTE:

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Data Sheet

December 2001