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STM32L151VBT6DTR датащи(PDF) 53 Page - STMicroelectronics |
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STM32L151VBT6DTR датащи(HTML) 53 Page - STMicroelectronics |
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53 / 121 page ![]() STM32L151x6/8/B, STM32L152x6/8/B Electrical characteristics Doc ID 17659 Rev 8 53/121 6.3.3 Embedded internal reference voltage The parameters given in Table 16 are based on characterization results, unless otherwise specified. Table 16. Embedded internal reference voltage Symbol Parameter Conditions Min Typ Max Unit VREFINT out (1) Internal reference voltage – 40 °C < TJ < +105 °C 1.202 1.224 1.242 V IREFINT Internal reference current consumption 1.4 2.3 µA TVREFINT Internal reference startup time 2 3 ms VVREF_MEAS VDDA and VREF+ voltage during VREFINT factory measure 2.99 3 3.01 V AVREF_MEAS Accuracy of factory-measured VREF value (2) Including uncertainties due to ADC and VDDA/VREF+ values ±5 mV TCoeff (3) Temperature coefficient –40 °C < TJ < +105 °C 20 50 ppm/°C 0 °C < TJ < +50 °C 20 ACoeff (3) Long-term stability 1000 hours, T= 25 °C 1000 ppm VDDCoeff(3) Voltage coefficient 3.0 V < VDDA < 3.6 V 2000 ppm/V TS_vrefint (3)(4) ADC sampling time when reading the internal reference voltage 510 µs TADC_BUF (3) Startup time of reference voltage buffer for ADC 10 µs IBUF_ADC (3) Consumption of reference voltage buffer for ADC 13.5 25 µA IVREF_OUT (3) VREF_OUT output current(5) 1µA CVREF_OUT (3) VREF_OUT output load 50 pF ILPBUF (3) Consumption of reference voltage buffer for VREF_OUT and COMP 730 1200 nA VREFINT_DIV1 (3) 1/4 reference voltage 24 25 26 % VREFINT VREFINT_DIV2 (3) 1/2 reference voltage 49 50 51 VREFINT_DIV3 (3) 3/4 reference voltage 74 75 76 1. Tested in production; 2. The internal VREF value is individually measured in production and stored in dedicated EEPROM bytes. 3. Guaranteed by design, not tested in production. 4. Shortest sampling time can be determined in the application by multiple iterations. 5. To guarantee less than 1% VREF_OUT deviation. |
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