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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TSU102IST датащи(PDF) 6 Page - STMicroelectronics |
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TSU102IST датащи(HTML) 6 Page - STMicroelectronics |
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6 / 33 page  Electrical characteristics TSU101, TSU102, TSU104 6/33 DocID024317 Rev 2 SR Slew rate (10 % to 90 %) RL = 1 MΩ, CL = 60 pF Vout = 0.3 V to (VCC+ - 0.3 V) 3V/ms en Equivalent input noise voltage f = 100 Hz 265 f = 1 kHz 265 ∫ en Low-frequency peak-to- peak input noise Bandwidth: f = 0.1 to 10 Hz 9 µVpp in Equivalent input noise current f = 100 Hz 0.64 f = 1 kHz 4.4 trec Overload recovery time 100 mV from rail in comparator RL = 100 kΩ, VID = ±VCC -40 °C < T< 85 °C 30 µs 1. Typical value is based on the Vio drift observed after 1000h at 125 °C extrapolated to 25 °C using the Arrhenius law and assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration. 2. Guaranteed by design. Table 3. Electrical characteristics at Vcc+ = 1.8 V with Vcc- = 0 V, Vicm = Vcc/2, Tamb = 25 ° C, and RL = 1 MΩ connected to Vcc/2 (unless otherwise specified) (continued) Symbol Parameter Conditions Min. Typ. Max. Unit nV Hz ------------ fA Hz ------------ |
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