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TSU102 датащи(PDF) 10 Page - STMicroelectronics

номер детали TSU102
подробное описание детали  Nanopower, rail-to-rail input and output, 5 V CMOS operational amplifiers
PDF  33 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

TSU102 датащи(HTML) 10 Page - STMicroelectronics

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Electrical characteristics
TSU101, TSU102, TSU104
10/33
DocID024317 Rev 2
SR
Slew rate (10 % to 90 %)
RL = 1 MΩ, CL = 60 pF,
Vout = 0.3 V to (VCC+ - 0.3 V)
3V/ms
en
Equivalent input noise
voltage
f = 100 Hz
240
f = 1 kHz
225
∫ en
Low-frequency
peak-to-peak input noise
Bandwidth: f = 0.1 to 10 Hz
8.1
µVpp
in
Equivalent input noise
current
f = 100 Hz
0.18
f = 1 kHz
3.5
trec
Overload recovery time
100 mV from rail in comparator
RL = 100 kΩ, VID= ±VCC
-40 °C < T< 85 °C
30
µs
EMIRR
Electromagnetic
interference rejection ratio(3)
Vin = -10 dBm, f = 400 MHz
73
dB
Vin = -10 dBm, f = 900 MHz
88
Vin = -10 dBm, f = 1.8 GHz
80
Vin = -10 dBm, f = 2.4 GHz
80
1. Typical value is based on the Vio drift observed after 1000h at 125 °C extrapolated to 25 °C using the Arrhenius law and
assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration.
2. Guaranteed by design.
3. Based on evaluations performed only in conductive mode.
Table 5. Electrical characteristics at Vcc+ = 5 V with Vcc- = 0 V, Vicm = Vcc/2, Tamb = 25 ° C, and
RL = 1 MΩ connected to Vcc/2 (unless otherwise specified) (continued)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
nV
Hz
------------
fA
Hz
------------



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