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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM8S005K6 датащи(PDF) 69 Page - STMicroelectronics |
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STM8S005K6 датащи(HTML) 69 Page - STMicroelectronics |
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69 / 103 page  Unit Max Typ Min Conditions Parameter Symbol % 1.0 (2) User-trimmed with CLK_HSITRIMR register Accuracy of HSI oscillator ACCHSI for given VDD and TA conditions (1) 5.0 VDD = 5 V, TA = 25°C (3) Accuracy of HSI oscillator (factory calibrated) 5.0 -5.0 VDD = 5 V, -40 °C ≤ TA ≤ 85 °C µs 1.0 (2) HSI oscillator wakeup time including calibration tsu(HSI) µA 250 (3) 170 HSI oscillator power consumption IDD(HSI) (1) Refer to application note. (2) Guaranteed by design, not tested in production. (3) Data based on characterization results, not tested in production. Figure 19: Typical HSI frequency variation vs VDD @ 3 temperatures IID10241 15.5 15.6 15.7 15.8 15.9 16 16.1 16.2 16.3 16.4 16.5 2.5 3 3.5 4 4.5 5 5.5 6 VDD [V] -40°C 25°C 85°C Low speed internal RC oscillator (LSI) Subject to general operating conditions for VDD and TA. 69/103 DocID022186 Rev 3 Electrical characteristics STM8S005K6 STM8S005C6 |
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