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STP18NM80 датащи(PDF) 5 Page - STMicroelectronics

номер детали STP18NM80
подробное описание детали  N-channel 800 V, 0.25 Ω, 17 A, MDmes Power MOSFET
PDF  21 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP18NM80 датащи(HTML) 5 Page - STMicroelectronics

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STB18NM80, STF18NM80, STP18NM80, STW18NM80
Electrical characteristics
Doc ID 15421 Rev 5
5/21
Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 400 V, ID = 8.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 16 and
Figure 21)
-
18
28
96
50
-
ns
ns
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
-
17
68
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 17 A, VGS = 0
-
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, di/dt = 100
A/µs, VDD = 100 V,
(see Figure 18)
-
618
9.6
31.2
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A,
di/dt = 100 A/µs,
VDD = 100 V, Tj=150°C
(see Figure 18)
-
822
13
31.8
ns
µC
A



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