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BCP56 датащи(PDF) 13 Page - NXP Semiconductors |
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BCP56 датащи(HTML) 13 Page - NXP Semiconductors |
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13 / 22 page ![]() BCP56_BCX56_BC56PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 9 — 25 October 2011 13 of 22 NXP Semiconductors BCP56; BCX56; BC56PA 80 V, 1 A NPN medium power transistors VCE =2V (1) Tamb = 100 C (2) Tamb =25 C (3) Tamb = 55 C Tamb =25 C Fig 15. DC current gain as a function of collector current; typical values Fig 16. Collector current as a function of collector-emitter voltage; typical values VCE =2V (1) Tamb = 55 C (2) Tamb =25 C (3) Tamb = 100 C IC/IB =10 (1) Tamb = 100 C (2) Tamb =25 C (3) Tamb = 55 C Fig 17. Base-emitter voltage as a function of collector current; typical values Fig 18. Collector-emitter saturation voltage as a function of collector current; typical values 006aac691 100 200 300 hFE 0 IC (A) 10–4 10 1 10–3 10–1 10–2 (1) (2) (3) VCE (V) 0 2.0 1.6 0.8 1.2 0.4 006aaa084 0.8 0.4 1.2 1.6 IC (A) 0 25 20 15 10 5 IB (mA) = 50 45 40 35 30 006aac692 0.4 0.8 1.2 VBE (V) 0.0 IC (mA) 10–1 104 103 1102 10 (1) (2) (3) 006aac693 IC (mA) 10–1 104 103 1102 10 10–1 1 VCEsat (V) 10–2 (1) (2) (3) |
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