2

Symbol

Parameter

Unit

SOT-23

SOT-323

I

f

Forward Current (1 μs Pulse)

Amp

1

1

P

IV

Peak Inverse Voltage

V

50

50

T

j

Junction Temperature

°C

150

150

T

stg

Storage Temperature

°C

-65 to 150

-65 to 150

°C/W

500

150

Notes:

1. Operation in excess of any one of these conditions may result in permanent damage to the

device.

2. T

C

= +25°C, where T

C

is defined to be the temperature at the package pins where contact is

made to the circuit board.

Minimum

Maximum

Typical

Maximum

Typical

Part

Package

Breakdown

Series

Total

Total

Total

Number

Marking

Lead

Voltage

Resistance

Capacitance

Capacitance

Inductance

HSMP-

Code

Code

Configuration

V

R

C

C

L

4820

FA

A

Dual Anode

50

0.6

0.75

1.2

1.0

482B

FA

A

Dual Anode

Test Conditions

V

R

= V

BR

I

F

= 10 mA

f = 1 MHz

f = 1 MHz

f = 500 MHz –

Measure

V

R

= 20 V

V

R

= 0 V

3 GHz

I

R

≤ 10 μA

High Frequency (Low Inductance, 500 MHz – 3 GHz) PIN Diodes

Electrical Specifications T

Package

Minimum

Maximum

Maximum

Part Number

Marking

Lead

Breakdown

Series Resistance

Total Capacitance

HSMP-

Code

Code

Configuration

Voltage V

R

C

3820

F0

0

Single

50

0.6

0.8

3822

F2

2

Series

3823

F3

3

Common Anode

3824

F4

4

Common Cathode

Test Conditions

V

R

= V

BR

f = 100 MHz

f = 1 MHz

Measure

I

F

= 10 mA

V

R

= 20 V

I

R

≤ 10 μA

Typical Parameters at T

Part Number

Series Resistance

Carrier Lifetime

Reverse Recovery Time

Total Capacitance

HSMP-

R

τ (ns)

T

C

382x

1.5

70

7

0.60 @ 20 V

Test Conditions

f = 100 MHz

I

F

= 10 mA

V

R

= 10 V

I

F

= 10 mA

I

F

= 20 mA

90% Recovery