IRLS3034TRLPBF datasheet(2/10 Pages) IRF

2 / 10 page

IRLS/SL3034PbF

www.irf.com

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Coss eff. (TR) is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as

Coss while VDS is rising from 0 to 80% VDSS.

When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer

to applocation note # AN-994.

Rθ is measured at TJ approximately 90°C

RθJC value shown is at time zero

Notes:

Calcuted continuous current based on maximum allowable junction

temperature Bond wire current limit is 195A. Note that current

limitation arising from heating of the device leds may occur with

some lead mounting arrangements.

Repetitive rating; pulse width limited by max. junction

temperature.

Limited by TJmax, starting TJ = 25°C, L = 0.013mH

RG = 25Ω, IAS = 195A, VGS =10V. Part not recommended for use

above this value .

ISD ≤ 195A, di/dt ≤ 841A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

–––

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

–––

0.04

––– V/°C

–––

1.4

1.7

–––

1.6

2.0

VGS(th)

Gate Threshold Voltage

1.0

–––

2.5

IDSS

Drain-to-Source Leakage Current

–––

250

IGSS

Gate-to-Source Forward Leakage

–––

100

Gate-to-Source Reverse Leakage

–––

-100

RG(int)

Internal Gate Resistance

–––

2.1

–––

Ω

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

gfs

Forward Transconductance

286

–––

Total Gate Charge

–––

108

162

Qgs

Gate-to-Source Charge

–––

Qgd

Gate-to-Drain ("Miller") Charge

–––

Qsync

Total Gate Charge Sync. (Qg - Qgd)

–––

td(on)

Turn-On Delay Time

–––

Rise Time

–––

827

–––

td(off)

Turn-Off Delay Time

–––

Fall Time

–––

355

–––

Ciss

Input Capacitance

––– 10315 –––

Coss

Output Capacitance

–––

1980

–––

Crss

Reverse Transfer Capacitance

–––

935

–––

Coss eff. (ER) Effective Output Capacitance (Energy Related)iÃ––– 2378 –––

Coss eff. (TR) Effective Output Capacitance (Time Related) h

–––

2986

–––

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Continuous Source Current

–––

(Body Diode)

ISM

Pulsed Source Current

–––

(Body Diode)

Ãd

VSD

Diode Forward Voltage

–––

1.3

trr

Reverse Recovery Time

–––

TJ = 25°C

VR = 34V,

–––

TJ = 125°C

IF = 195A

Qrr

Reverse Recovery Charge

–––

TJ = 25°C

di/dt = 100A/µs

–––

TJ = 125°C

IRRM

Reverse Recovery Current

–––

1.7

–––

TJ = 25°C

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

VGS = -20V

showing the

VDS = 20V

Conditions

VGS = 4.5V g

VGS = 0V

VDS = 25V

ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 32V i

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 5mAd

VGS = 10V, ID = 195A g

VDS = VGS, ID = 250µA

VDS = 40V, VGS = 0V

VDS = 40V, VGS = 0V, TJ = 125°C

VGS = 0V, VDS = 0V to 32V h

MOSFET symbol

TJ = 25°C, IS = 195A, VGS = 0V g

integral reverse

p-n junction diode.

VGS = 20V

µA

RDS(on)

Static Drain-to-Source On-Resistance

343

1372

VGS = 4.5V, ID = 172A g

Ω

ID = 195A

RG = 2.1Ω

VGS = 4.5V g

VDD = 26V

ID = 185A, VDS =0V, VGS = 4.5V

Conditions

VDS = 10V, ID = 195A

ID = 185A

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