JS28F512P30TFA datasheet(1/86 Pages) MICRON

номер детали	JS28F512P30TFA

подробное описание детали	Numonyx Axcell P30-65nm Flash Memory

PDF	86 Pages

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производитель	MICRON [Micron Technology]

домашняя страница	http://www.micron.com

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Datasheet

Sept 2012

1

Order Number: 208042-0

6

Numonyx® Axcell™ P30-65nm Flash Memory

512-Mbit, 1-Gbit , 2-Gbit

Datasheet

Product Features

High performance:

Easy BGA:

— 100ns initial access time (512-Mbit, 1-Gbit)

— 105ns initial access time (2-Gbit)

— 25ns 16-word asynchronous-page read mode

— 52MHz with zero WAIT states, 17ns clock-to-

data output synchronous-burst read mode

— 4-, 8-, 16- and continuous-word options for

burst mode

TSOP:

— 110ns initial access time

Easy BGA and TSOP:

— Buffered Enhanced Factory Programming at

2.0MByte/s (typ) using 512-word buffer

— 1.8V buffered programming at 1.46MByte/s

(Typ) using 512-word buffer

Architecture:

— Multi-Level Cell Technology: Highest Density

at Lowest Cost

— Symmetrically-blocked architecture (512-

Mbit, 1-Gbit, 2-Gbit)

— Asymmetrically-blocked architecture, Four 32-

KByte parameter blocks: Top or Bottom

configuration (512-Mbit, 1-Gbit)

— 128-KByte array blocks

— Blank Check to verify an erase block

Voltage and Power:

— VCC (core) voltage: 1.7V – 2.0V

— VCCQ (I/O) voltage: 1.7V – 3.6V

— Standby current: 70µA(Typ) for 512-Mbit,

75µA(Typ) for 1-Gbit

— Continuous synchronous read current (Easy

BGA): 21mA (Typ)/24mA (Max) at 52MHz

Enhanced Security:

— Absolute write protection: VPP = VSS

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down capability

— Password Access feature

— One-Time Programmable Register:

— 64 OTP bits, programmed with unique

information by Numonyx

— 2112 OTP bits, available for customer

programming

Software:

— 25µs (Typ) program suspend

— 30µs (Typ) erase suspend

—Numonyx® Flash Data Integrator optimized

— Basic Command Set and Extended Function

Interface (EFI) Command Set compatible

— Common Flash Interface capable

Density and Packaging

— 56-Lead TSOP (512-Mbit, 1-Gbit)

— 64-Ball Easy BGA (512-Mbit, 1-Gbit, 2-Gbit)

— 16-bit wide data bus

Quality and Reliability

— JESD47E Compliant

— Operating temperature: –40°C to +85°C

— Minimum 100,000 erase cycles

— 65nm process technology

Аналогичный номер детали - JS28F512P30TFA

производитель	номер детали	датащи	подробное описание детали
Micron Technology	JS28F512P30TF	1Mb / 92P	Micron Parallel NOR Flash Embedded Memory (P30-65nm)
Micron Technology	JS28F512P30TF	1Mb / 92P	Micron Parallel NOR Flash Embedded Memory (P30-65nm)

More results

Аналогичное описание - JS28F512P30TFA

производитель	номер детали	датащи	подробное описание детали
Micron Technology	JS28F256P30TFA	1Mb / 95P	Micron Parallel NOR Flash Embedded Memory (P30-65nm)
	JS28F640P30TF75A	1Mb / 90P	Numonyx짰 Axcell??P30-65nm Flash Memory
	PC28F00BP30EFA	11Mb / 86P	Numonyx짰 Axcell??P30-65nm Flash Memory
	PC28F00AP30TFA	11Mb / 86P	Numonyx짰 Axcell??P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit
	JS28F128P30TF75A	1Mb / 90P	Numonyx Axcell P30-65nm Flash Memory
	PC28F256P30TFA	1Mb / 95P	Micron Parallel NOR Flash Embedded Memory (P30-65nm)
	JS28F512P30EFA	1Mb / 92P	Micron Parallel NOR Flash Embedded Memory (P30-65nm)
	PC28F256P30BFA	1Mb / 98P	Micron Parallel NOR Flash Embedded Memory (P30-65nm)
Numonyx B.V	JS28F128P30T85A	1Mb / 97P	Numonyx??StrataFlash짰 Embedded Memory (P30)
Micron Technology	RC28F256P30BFA	1Mb / 98P	Micron Parallel NOR Flash Embedded Memory (P30-65nm)

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