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MRF247

MOTOROLA RF DEVICE DATA

The RF Line

NPN Silicon

RF Power Transistor

The MRF247 is designed for 12.5 Volt VHF large–signal amplifier applications

in industrial and commercial FM equipment operating to 175 MHz.

• Specified 12.5 Volt, 175 MHz Characteristics —

Output Power = 75 Watts

Power Gain = 7.0 dB Min

Efficiency = 55% Min

• Characterized With Series Equivalent Large–Signal Impedance Parameters

• Internal Matching Network Optimized for Minimum Gain Frequency Slope

Response Over the Range 136 to 175 MHz

• Load Mismatch Capability at Rated Pout and Supply Voltage

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

18

Vdc

Collector–Base Voltage

VCBO

36

Vdc

Emitter–Base Voltage

VEBO

4.0

Vdc

Collector Current — Peak

IC

20

Adc

Total Device Dissipation @ TC = 25°C (1)

Derate above 25

°C

PD

250

1.43

Watts

W/

°C

Storage Temperature Range

Tstg

– 65 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case (2)

R

θJC

0.7

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 100 mAdc, IB = 0)

V(BR)CEO

18

—

—

Vdc

Collector–Emitter Breakdown Voltage

(IC = 50 mAdc, VBE = 0)

V(BR)CES

36

—

—

Vdc

Emitter–Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

4.0

—

—

Vdc

(1) This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.

(2) Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.

Order this document

by MRF247/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MRF247

75 W, 175 MHz

CONTROLLED Q

RF POWER

TRANSISTOR

NPN SILICON

CASE 316–01, STYLE 1

REV 1