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FMMTL718TA датащи(PDF) 2 Page - Diodes Incorporated

номер детали FMMTL718TA
подробное описание детали  20V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23
PDF  5 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
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FMMTL718TA датащи(HTML) 2 Page - Diodes Incorporated

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FMMTL718
Document Number: DS33132 Rev. 2 - 2
2 of 5
www.diodes.com
June 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FMMTL718
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-20
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-5
V
Continuous Collector Current
IC
-1
A
Peak Pulse Current
ICM
-2
A
Base Current
IB
-200
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 4)
PD
500
mW
Thermal Resistance, Junction to Ambient
(Note 4)
RθJA
250
°C/W
Thermal Resistance, Junction to Lead
(Note 5)
RθJL
197
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes:
4. For a device surface mounted on 15mm X 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
5. Thermal resistance from junction to solder-point (at the end of the collector lead).
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
-20
-65
V
IC = -100 µA
Collector-Emitter Breakdown Voltage (Note 6)
BVCEO
-20
-55
V
IC = -10 mA
Emitter-Base Breakdown Voltage
BVEBO
-5
-8.8
V
IE = -100 µA
Collector Cutoff Current
ICBO
-10
nA
VCB = -15V
Emitter Cutoff Current
IEBO
-10
nA
VEB = -4V
Collector Emitter Cutoff Current
ICES
-10
nA
VCE= -15V
Static Forward Current Transfer Ratio
(Note 6)
hFE
300
300
200
120
50
500
450
320
200
80
IC = -10mA, VCE = -2V
IC = -100mA, VCE = -2V
IC = -0.5A, VCE = -2V
IC = -1A, VCE = -2V
IC = -1.5A, VCE = -2V
Collector-Emitter Saturation Voltage
(Note 6)
VCE(sat)
-33
-130
-230
-315
-50
-180
-320
-450
mV
mV
mV
mV
IC =- 100mA, IB = -10mA
IC =- 500mA, IB = -20mA
IC = -1A, IB = -50mA
IC = -1.5A, IB = -100mA
Base-Emitter Turn-On Voltage(Note 6)
VBE(on)
-0.85
-1.0
V
IC = -1.25A, VCE = -2V
Base-Emitter Saturation Voltage(Note 6)
VBE(sat)
-0.95
-1.1
V
IC = -1.25A, IB = -100mA
Equivalent On-Resistance
RCE(sat)
210
m
IC = -1.5A
Output Capacitance
Cobo
9
12
pF
VCB = -10V, f = 1MHz
Transition Frequency
fT
265
MHz
VCE = -10V, IC = -50mA,
f = 100MHz
Turn-On Time
ton
108
ns
VCC=-10V, IC =-1A
IB1 = IB2 = -10mA
Turn-Off Time
toff
121
ns
Note:
6. Measured under pulsed conditions. Pulse width
300 µs. Duty cycle ≤ 2%



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