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FMMTL718TA датащи(PDF) 2 Page - Diodes Incorporated |
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FMMTL718TA датащи(HTML) 2 Page - Diodes Incorporated |
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2 / 5 page ![]() FMMTL718 Document Number: DS33132 Rev. 2 - 2 2 of 5 www.diodes.com June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated FMMTL718 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -20 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -1 A Peak Pulse Current ICM -2 A Base Current IB -200 mA Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Power Dissipation (Note 4) PD 500 mW Thermal Resistance, Junction to Ambient (Note 4) RθJA 250 °C/W Thermal Resistance, Junction to Lead (Note 5) RθJL 197 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 4. For a device surface mounted on 15mm X 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 5. Thermal resistance from junction to solder-point (at the end of the collector lead). Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO -20 -65 V IC = -100 µA Collector-Emitter Breakdown Voltage (Note 6) BVCEO -20 -55 V IC = -10 mA Emitter-Base Breakdown Voltage BVEBO -5 -8.8 V IE = -100 µA Collector Cutoff Current ICBO -10 nA VCB = -15V Emitter Cutoff Current IEBO -10 nA VEB = -4V Collector Emitter Cutoff Current ICES -10 nA VCE= -15V Static Forward Current Transfer Ratio (Note 6) hFE 300 300 200 120 50 500 450 320 200 80 IC = -10mA, VCE = -2V IC = -100mA, VCE = -2V IC = -0.5A, VCE = -2V IC = -1A, VCE = -2V IC = -1.5A, VCE = -2V Collector-Emitter Saturation Voltage (Note 6) VCE(sat) -33 -130 -230 -315 -50 -180 -320 -450 mV mV mV mV IC =- 100mA, IB = -10mA IC =- 500mA, IB = -20mA IC = -1A, IB = -50mA IC = -1.5A, IB = -100mA Base-Emitter Turn-On Voltage(Note 6) VBE(on) -0.85 -1.0 V IC = -1.25A, VCE = -2V Base-Emitter Saturation Voltage(Note 6) VBE(sat) -0.95 -1.1 V IC = -1.25A, IB = -100mA Equivalent On-Resistance RCE(sat) 210 m Ω IC = -1.5A Output Capacitance Cobo 9 12 pF VCB = -10V, f = 1MHz Transition Frequency fT 265 MHz VCE = -10V, IC = -50mA, f = 100MHz Turn-On Time ton 108 ns VCC=-10V, IC =-1A IB1 = IB2 = -10mA Turn-Off Time toff 121 ns Note: 6. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2% |
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